DIODE D40 Search Results

IDW40G120C5B

Contextual Info: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1

Contextual Info: D405-120 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 120mW laser diode● 405nm laser diode 120mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)

diode D405

Contextual Info: D405-20 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 20mW laser diode● 405nm laser diode 20mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)

IDW40G65C5

Abstract: D4065C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications

FAST RECOVERY DIODE

Abstract: D-40 RM400HA-24S RM400HA24S
Contextual Info: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

Contextual Info: RM400HA-34S Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S u p e f F S S t R e C O V e ty Single Diode Module 400 Amperes/1700 Volts Description: O U TLINE DRAWING Powerex Super-Fast Recovery Single Diode Modules are

Diode LT 5333

Abstract: D-73277 f9250
Contextual Info: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is

Contextual Info: D40K4 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrat. Page 2 of 4 You are Here: Home Home Information Spec D40K4 Availability Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Products Search for Parts

8 channel optocouplers

Abstract: 2a quad darlington switch DARLINGTON phototransistor 14 2A Optocouplers QUAD Phototransistor Optocouplers TIL917B TIL919B TIL917 TIL917A TIL917C
Contextual Info: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 – D4000, FEBRUARY 1992 • • • • • Gallium-Arsenide Diode Infrared Source Source Is Optically Coupled to Silicon

Contextual Info: m N ERBL RM400HA-34S Tentative P ow erex, Inc., 2 0 0 H illis S treet, Youngwood, P en n sylvan ia 15 697-1800 4 12 92 5 -7 2 7 2 S u p e t F a s t R e C O V e ty Single Diode Module 400 Amperes/1700 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are

D400

Abstract: transistor D400 diode d400 D400 transistor D400 data sheet download d400 f D400 data sheet datasheet transistor D400 D400 datasheet d400 transistor datasheet
Contextual Info: Rectifier Diode D400 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Type No. D400/04 D400/08 D400/12 D400/16 VRRM Volts 400 800 1200 1600 Symbol I F(AV) I FSM I2t I RRM VF

diode D40

Abstract: D4012 D-40 d4008
Contextual Info: Rectifier Diode D40 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Type No. D40/02 D40/04 D40/08 D40/12 D40/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV) I FSM I2t I RRM

HPND4050

Abstract: IC STU 404 D HPND-4050
Contextual Info: E 3 Pa c k a r d APPLICATION NOTE 971 The HPND-4050 Beam Lead Mesa PIN in Shunt Applications INTRODUCTION The beam lead PIN diode, w h ile sa tisfyin g requirem ents fo r low ca pa citan ce and planar c irc u it attachm ent, is g e n e ra lly fa b rica te d as a planar PIN diode in o rd e r to

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

D4027BC

Contextual Info: O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description All inputs are protected a gainst dam age due to static dis­ charge by diode clam ps to V DD and V s s- The C D4027BC dual J-K flip-flops are m onolithic com ple­ m entary MOS CM OS integrated circuits constructed with

D4030A

Abstract: d4030
Contextual Info: A I R C H I L D O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description protected from dam age due to static discharge by diode clam ps to V DD and V Ss- T h e C D4070BC em ploys com plem entary MOS CMOS transistors to achieve w ide pow er supply operating range,

D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS

BU108

Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

2sC144

Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for