DIODE D07 Search Results
DIODE D07 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE D07 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BB130
Abstract: capacitance diode cd-12 TO-92
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007e5bb130od-69capacitance diode+1 | |
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Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused |
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sda32dil20200ma | |
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Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA |
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sda32200madil20sda32n20+1 | |
"Varactor Diode"
Abstract: MV1401 varactor diode datasheet varactor diode tuning varactor varactor APPLICATION
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mv1401ct1/ct10varactor diodevaractor diode datasheet+2 | |
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Contextual Info: DKV65232 SILICON VARACTOR DIODE 22 VOLTS DESCRIPTION: The DKV65232 is a Silicon Hyperabrupt Varactor Diode Designed for EHF Operation. FEATURES INCLUDE: PACKAGE STYLE D0-7 • High Tuning Ratio - 6.3 Typ. • Linear Tuning Characteristic • Hermetic DO-7 Package |
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dkv65232ct4/ct20 | |
BB112
Abstract: am variable capacitance diode 8b112 NA 440
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d07ssbb112od-69am variable capacitance diode+2 | |
dil16
Abstract: DIL16-package diode d07 49 schematic with a schottky diode SDA24 SDA24D16 SDA24N16 DSA003653
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sda24200madil16sda24d16+5 | |
SDA32N20
Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
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sda32200madil20sda32n20+4 | |
1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
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1n2251n22601n2271n228+16 | |
DIODE N20
Abstract: SD Series
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sda12sda24sda32sda16d24+6 | |
diode D07-15
Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
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tsc5302do-251o-252tsc5302dcp+10 | |
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Contextual Info: / = T SGS-THOMSON * 7#. TM BAT 49 M M IIU Ig » [l] g Ì SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges. |
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0075c | |
diode 1N5819Contextual Info: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low |
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1n5819diode 1n5819 | |
marking JC diode
Abstract: SOD-64 marking JC diode SOD 64 double diode parallel BY228
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d07431flby228od-64marking jc diode+4 | |
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Contextual Info: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 S chottky Barrier Diode A rra y is designed to reduce reflection noise on high speed parallel data lines. • Reduced re fle c tio n noise • R e p e titive peak fo rw a rd c u rre n t 2 00m A |
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sda24s016n | |
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Contextual Info: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured |
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d000177in4890-4895appm/1000do-35+3 | |
1N3501
Abstract: 1N3504 1N3503 Semitron Industries 6265
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137flfl00qg175in3s01-3504ppm/1000+5 | |
diode D07-15
Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
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erd07diode d07-15d07 15d07-15 diode+6 | |
DIODE SW-05Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40 |
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110mpot-23200mhzt0220+3 | |
1N4895A
Abstract: 1N4890 1N4890A 1N4891A 1N4893 1N4895 zener diode A23
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fll37d000177ppm/10001n4895a+6 | |
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Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07 |
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g00g173500mwdo-35do-41+2 | |
1n9418
Abstract: 1N941 1N941A 1N941B 1N942 1N942A 1N942B 1N943 1N943A j5304
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g00g173500mw0009vc002vc+11 | |
smd code p5
Abstract: BB135 smd diode B3E smd diode marking B3E marking CODE R SMD DIODE
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d0742b3bb135od323msb045+4 | |
NE527
Abstract: TSE 151 NE527D
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ne527ne529tse 151ne527d | |