DIODE C309 Search Results

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

MAD1103P

Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
Contextual Info: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

C30902E

Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
Contextual Info: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications

Contextual Info: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­

Contextual Info: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications

C30952E

Abstract: C30952F C30950E rca solid state Linear RCA Solid State C30807 C30950G RCA Solid State amplifier C30952EL C30952FL
Contextual Info: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications

C30902S

Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Contextual Info: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip

C30950E

Abstract: C30950 equivalent RCA Solid State power devices C30952E rca 514 C30971 C30952F C30950 RCA 3,5 MM 4-PIN
Contextual Info: G E ELECTRO OPTICS itCil IDE D Electro Optics and Devices 3Û74154 QQQQQ4b 5 H GEEO 7' V A k 7 Solid State Detectors Developmental Types C30952 Series € Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications

C30952E

Abstract: C30950E C30952F C30950 C30807 C30952EL C30952FL C30952G C30952GL C30971E
Contextual Info: R C A 1QE D I 74041=75 DOQDOMt. A | 7 ' V A i » 7 INC/ ELECTRO OPTICS .N l / LLLv. I KV R C/1 Electro Optics and Devices Solid State Detectors Developmental Types C30952 Series f Photodiodes Very Wide B a n d p a ss Silicon Photodiode - Preamplifier M odules

C30902S

Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava­

C30902SH-DTC

Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

Contextual Info: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si diode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn

Contextual Info: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with

RCA 014

Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si diode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn

C30902E

Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
Contextual Info: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon

C30950E

Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
Contextual Info: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

Contextual Info: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

C30817

Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
Contextual Info: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

C30950E

Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State
Contextual Info: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules