DIODE C25 20 Search Results

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

Contextual Info: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms

c25 diode

Abstract: C25 MARKING CODE tuner sony 1T397
Contextual Info: 1T397 Variable Capacitance Diode Description The 1T397 is a variable capacitance diode designed for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features • Super miniature package • Large capacitance ratio C2/C25=14.5 Min.

Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings

Contextual Info: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous

Contextual Info: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 IXGH10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ

1SV282

Contextual Info: 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 12.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV214

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV283B

Contextual Info: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B Unit: mm CATV Tuning • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error

1SV269

Contextual Info: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 12.5 typ. · Low series resistance: rs = 0.6 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

1SV290B

Contextual Info: 1SV290B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290B CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV288

Contextual Info: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV282

Abstract: c25 diode
Contextual Info: 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 12.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV290

Contextual Info: 1SV290 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV287

Contextual Info: 1SV287 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV287 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 7.6 typ. • Low series resistance: rs = 1.9 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV302

Contextual Info: 1SV302 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 17.5 typ. • Low series resistance: rs = 1.05 Ω (typ.) • Useful for small size tuner. Maximum Ratings (Ta = 25°C)

1SV215

Contextual Info: 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 10.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.