DIODE BY 129 Search Results

anzac switches

Abstract: anzac SIGNAL PATH designer designers handbook
Contextual Info: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small

CMPD914

Abstract: diode By 129
Contextual Info: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

TA 1319 AP

Abstract: ML725B11F-05 ML725B11F-07
Contextual Info: MITSUBISHI ELECTRIC CORPORATION SPECIFICATION PREPARED BY: M. Yamada CHECKED BY: K.Mori APPROVED BY: S.Minamihara DATE: Nov. 8. En g l i s h v e r s io n o n l y ‘01 1.TYPE : ML725BllF-04,05,06,07 2.APPLICATION : Optcal Fiber Communication 3.STRUCTURE : InGaAsP/InP DFB LASER DIODE

mouse Phototransistor

Abstract: LBR-129
Contextual Info: Reflective Object Sensor Model No: LBR-129 Description The LBR-129 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED

MC68HC705J1A

Abstract: AN1238 HC05 Application Note AN1238
Contextual Info: Order this document by AN1238/D Freescale Semiconductor AN1238 HC05 MCU LED Drive Techniques Using the MC68HC705J1A Freescale Semiconductor, Inc. By David Yoder CSIC Applications INTRODUCTION This application note demonstrates how the high-current sink pins of an MC68HC705J1A drive a lightemitting diode LED directly without requiring an external amplifying transistor.

Contextual Info: Central” CMPD914 Sem iconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C T O R CM PD 914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Contextual Info: Central CMPD914 TM Sem i c o n d u c t o r C o r p . HIGH SPEED SWITCHING DIODE DESCRIPTION The C ENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

Contextual Info: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

650nm 5mw laser

Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |

Contextual Info: TVS Diode Axial Leaded – 3000W > 3KP series 3KP Series RoHS Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

103A

Abstract: TP801C06
Contextual Info: TP801C06 5A M Outline Drawing SCHOTTKY BARRIER DIODE • Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings

AK2572

Abstract: QFN28 ASAHI KASEI L 817
Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES •Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

mps 7530

Abstract: MOC2A60-5 MOC2A60 RS-443 1000C IEEE472
Contextual Info: MOTOROLA SEMICONDUCTOR m a TECHNICAL Order this document by MOC2A60-10/D DATA MOC2A60=I O MOC2A60=5* POWER OPTOTMIsolator 2 Amp Zero-Cross Triac Output ‘Motorola Preferred Device This device consists of a gallium arsenide infrared emitting diode optically coupled to

SCHOTTKY DIODE 10A 0.35V

Contextual Info:  APPLICATION NOTE LOW FORWARD VOLTAGE SCHOTTKY DIODE B.Rivet INTRODUCTION In power supplies, the major portion of power losses is due to output rectifiers. The impact of these losses on the efficiency can be expressed by : η= η VF IOUT VOUT VF(IOUT)

Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

MOC2A60-5

Abstract: 417B-01 MOC2A60-10F
Contextual Info: MOTOROLA Order this document by MOC2A60-10/D SEMICONDUCTOR TECHNICAL DATA MOC2A60-10 M O C2A60-5* POWER OPTO Isolator 2 Amp Zero-Cross Triac Output ‘ Motorola Preferred Device This device consists of a gallium arsenide infrared emitting diode optically coupled to

1N746A-1

Abstract: 452 regulator JANHCB1N752
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

DO213-AB color band

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES

SDH02

Abstract: STA401A
Contextual Info: Product index by function Sink driver ●With built-in avalanche diode between collector and base Part Number Number of chips STA460C 2 STA371A 3 STA301A 3 SDC06 4 STA413A 4 STA481A 4 SDC03 4 STA471A 4 STA401A 4 SLA4010 4 STA406A 4 STA435A 4 STA485A 4 SDC04

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 September 2013. MIL-PRF-19500/730B 26 June 2013 SUPERCEDING MIL-PRF-19500/730A 14 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

KD 472 M mov

Abstract: TM 0134 led driver triac tic 226 q 391 2 amp triac driver opto triac tic 109
Contextual Info: MOTOROLA Order this document by MQC2R60-10/D SEMICONDUCTOR TECHNICAL DATA Advance Information M O C 2R 60-10* M O C 2R 60-15 POWER OPTO Isolator 2 Amp Random-Phase Triac Output * Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically