DIODE BY 129 Search Results

anzac switches

Abstract: anzac SIGNAL PATH designer designers handbook
Contextual Info: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small

CMPD914

Abstract: diode By 129
Contextual Info: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

TA 1319 AP

Abstract: ML725B11F-05 ML725B11F-07
Contextual Info: MITSUBISHI ELECTRIC CORPORATION SPECIFICATION PREPARED BY: M. Yamada CHECKED BY: K.Mori APPROVED BY: S.Minamihara DATE: Nov. 8. En g l i s h v e r s io n o n l y ‘01 1.TYPE : ML725BllF-04,05,06,07 2.APPLICATION : Optcal Fiber Communication 3.STRUCTURE : InGaAsP/InP DFB LASER DIODE

Contextual Info: Central” CMPD914 Sem iconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C T O R CM PD 914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Contextual Info: Central CMPD914 TM Sem i c o n d u c t o r C o r p . HIGH SPEED SWITCHING DIODE DESCRIPTION The C ENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

Contextual Info: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

650nm 5mw laser

Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |

Contextual Info: TVS Diode Axial Leaded – 3000W > 3KP series 3KP Series RoHS Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional

103A

Abstract: TP801C06
Contextual Info: TP801C06 5A M Outline Drawing SCHOTTKY BARRIER DIODE • Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings

AK2572

Abstract: QFN28 ASAHI KASEI L 817
Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES •Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

TRIAC RCA

Abstract: TRIAC 226 b trailing SCHEMATIC dimmer motorola triac driver 2 amp triac driver opto 180 watts arc lamp driver MOV150 motorola 715 triac W117 MOC2R60
Contextual Info: MOTOROLA Order this document by MOC2R60–10/D SEMICONDUCTOR TECHNICAL DATA Advance Information MOC2R60-10 * MOC2R60-15 POWER OPTO Isolator 2 Amp RandomĆPhase Triac Output *Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically coupled

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

MOC2A60-5

Abstract: 417B-01 MOC2A60-10F
Contextual Info: MOTOROLA Order this document by MOC2A60-10/D SEMICONDUCTOR TECHNICAL DATA MOC2A60-10 M O C2A60-5* POWER OPTO Isolator 2 Amp Zero-Cross Triac Output ‘ Motorola Preferred Device This device consists of a gallium arsenide infrared emitting diode optically coupled to

1N746A-1

Abstract: 452 regulator JANHCB1N752
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

SDH02

Abstract: STA401A
Contextual Info: Product index by function Sink driver ●With built-in avalanche diode between collector and base Part Number Number of chips STA460C 2 STA371A 3 STA301A 3 SDC06 4 STA413A 4 STA481A 4 SDC03 4 STA471A 4 STA401A 4 SLA4010 4 STA406A 4 STA435A 4 STA485A 4 SDC04

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

KD 472 M mov

Abstract: TM 0134 led driver triac tic 226 q 391 2 amp triac driver opto triac tic 109
Contextual Info: MOTOROLA Order this document by MQC2R60-10/D SEMICONDUCTOR TECHNICAL DATA Advance Information M O C 2R 60-10* M O C 2R 60-15 POWER OPTO Isolator 2 Amp Random-Phase Triac Output * Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

TRIAC RCA

Abstract: RCA H 432 MOC2A60-5 lamp dimmer with triac MOC2A60-10F motorola triac driver TRIAC 8315 IEEE472 MOC2A60 MOC2A60-10
Contextual Info: MOTOROLA Order this document by MOC2A60–10/D SEMICONDUCTOR TECHNICAL DATA POWER OPTO Isolator MOC2A60-10 MOC2A60-5* 2 Amp Zero–Cross Triac Output This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero–cross triac driver circuit and a power triac. It is capable of

MOC2A40-5

Contextual Info: MOTOROLA Order this document by MOC2A40–10/D SEMICONDUCTOR TECHNICAL DATA POWER OPTO Isolator MOC2A40-10 MOC2A40-5* 2 Amp Zero–Cross Triac Output This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero–cross triac driver circuit and a power triac. It is capable of driving

snubber circuit for mosfet

Abstract: RC snubber mosfet design RCD snubber mosfet design mosfet morocco RC snubber diode RC snubber mosfet boost RCD Snubber Mosfet boost RCD snubber snubber rc mosfet sth15na50
Contextual Info: APPLICATION NOTE MAGNETIC SNUBBER FOR 200W PFC WITH UNIVERSAL MAINS by C. Adragna and N. Tricomi In high voltage continuous mode boost converters, a significant part of the power mosfet switching losses is related to the turn-on edge. In fact, at turn on, the power mosfet has to sustain both the boost diode reverse recovery and

MOC2A40-10

Contextual Info: Order this data sheet by MOC2A40-10/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC2A40-10 MOC2A40-5 POWER OPTO Isolator 2 Amp Zero-Cross Triac Output This device consists of a gallium arsenide infrared elmitiing diode optically coupled to a zero-cross triac driver circuit and a power triac. It is capable of driving a load of up to 2

Contextual Info: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

skiip gar 170

Abstract: gar170 IGBT 1200A
Contextual Info: SKiiP 1292 GAR 170 - 478 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT