DIODE BODY MARK A1 Search Results

fz-11p

Abstract: FZ-11 FD-L51 zener diodes color coded CX-30 FD-L52 FX-11A FX-13 push button fz FZ-10
Contextual Info: SERIES Color Detection Fiber Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS FZ-10 FX-13 FX-11A Fiber Sensors Reliable and Precise Color Discrimination EX-20 EX-10 CX-30 CX-RVM5/D100/ND300R Amplifier Built-in Type CX-20 FZ-10 Marked Conforming to EMC Directive Red, Green and Blue LEDs

AOZ8201

Abstract: AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

MAX3208EAUB

Abstract: MAX3208E
Contextual Info: 19-3361; Rev 3; 7/10 Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs The MAX3205E/MAX3207E/MAX3208E low-capacitance, ±15kV ESD-protection diode arrays with an integrated transient voltage suppressor TVS clamp are suitable for high-speed and general-signal ESD protection. Low input capacitance makes these devices ideal

Contextual Info: FMKA130 FMKA130 Features • • • Compact Surface Mount with J-bend Leads SMA 1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *

CSPESD304

Abstract: CSPESD304G
Contextual Info: 4-Channel ESD Array in CSP CSPESD304 Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic

Si8419DB

Abstract: S 50341
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

a96 laser diode

Abstract: a96 laser a96 "laser diode"
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

231B DIODE

Abstract: Si8435DB
Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Si8435DB

Abstract: 231B DIODE
Contextual Info: New Product Si8435DB Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Contextual Info: CM1204 4-Channel ESD Array in CSP Features Product Description • The CM1204 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

Contextual Info: CM1204 4-Channel ESD Array in CSP Features Product Description • The CM1204 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

62030

Abstract: SI8424 Si8424DB marking 8424
Contextual Info: Si8424DB Vishay Siliconix New Product N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ)

Si8429DB

Abstract: 74399
Contextual Info: New Product Si8429DB Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V

si8473

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

marking A7 diode

Contextual Info: CM1220 8-Channel ESD Protection Array in CSP Features Product Description • • • California Micro Devices' CM1220 ESD protection array is available in an eight channel configuration. Each ESD channel features a nominal capacitance of 14pF making these devices ideal for protecting high

si84

Abstract: si8475
Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

NC7WZ07FHX

Abstract: FAIRCHILD DUAL 4 INPUT
Contextual Info: NC7WZ07 TinyLogic UHS Dual Inverter Features Description ƒ ƒ ƒ ƒ ƒ Ultra-High Speed: tPZL 2.3ns Typical ƒ ƒ Proprietary Noise/EMI Reduction Circuitry The NC7WZ07 is a dual buffer with open drain outputs from Fairchild’s Ultra-High Speed (UHS) series of

CM1230-02

Contextual Info: CM1230 2-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a 2-channel, very low capacitance ESD protection diode array in CSP form factor. This device is ideal for protecting systems with high data and clock rates or for circuits that require low capacitive loading.

Contextual Info: CM1230 2-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a 2 channel, very low capacitance ESD protection diode array in CSP form factor. This device is ideal for protecting systems with high data and clock rates or for circuits that require low capacitive loading.

JESD22-A114

Abstract: NC7WZ16 NC7WZ16L6X NC7WZ16P6X SC70-6 Z16 dual buffer
Contextual Info: NC7WZ16 TinyLogic UHS Dual Buffer Features Description ƒ Ultra-High Speed: tPD 2.4ns Typical into 50pF at 5V VCC ƒ ƒ ƒ High Output Drive: ±24mA at 3V VCC ƒ ƒ Power Down High-Impedance Inputs/Outputs The NC7WZ16 is a dual buffer from Fairchild’s Ultra®

Contextual Info: NC7WZ16 TinyLogic UHS Dual Buffer Features Description ̇ Ultra-High Speed: tPD 2.4ns Typical into 50pF at 5V VCC ̇ ̇ ̇ High Output Drive: ±24mA at 3V VCC ̇ ̇ Power Down High-Impedance Inputs/Outputs The NC7WZ16 is a dual buffer from Fairchild’s Ultra®

Contextual Info: NC7WZ07 TinyLogic UHS Dual Buffer Open Drain Outputs Features Description • •    The NC7WZ07 is a dual buffer with open drain outputs from Fairchild’s Ultra-High Speed (UHS) series of TinyLogic®. The device is fabricated with advanced CMOS technology to achieve ultra-high speed with high