DIODE BAY 80 Search Results

Contextual Info: BAY 92 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Schnelle Schalter, für hohe Betriebsspannungen Applications: Fast switches, with high supply voltages Abmessungen in mm Dimensions in mm 1 1 Il_ I If— "111 1 1 1 1U - H i —

Diode BAY 45

Abstract: Diode BAY 89 41880
Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm

Diode BAY 96

Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
Contextual Info: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

Diode BAY 55

Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

Diode BAY 80

Abstract: BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode
Contextual Info: FAIRCH IL D SE MI CO NDU CTO R S4 i F| DaBTBlb E J~- 3469 674 T A I R C H I U D ”SE MI C O N D U C T O R g g fg g ^ T S 84D 27296 BAY72/BAY80 - A Schlum berger C om pany T. PACKAGES BAY72 BAY80 ABSOLUTE MAXIMUM RATINGS N ote 1) T e m p e ra tu re s S torage Tem perature Range

dual photodiode

Abstract: 2 Wavelength Laser Diode ADN2841 automatic laser power control diode IN 5402 FU-445 laser diodes driver
Contextual Info: ADN2841—Continuous Rate 2.7 Gbps Laser Diode Driver with Dual-Loop Control Features • Closed-loop control of the laser diode average power and extinction ratio • Does not require any data formatting • Data rates from 50 Mbps to 2.7 Gbps 80 ps typical rise time

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

Voltage Regulator LM78L09 TO-92 package

Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of

IR diodes TFK 4

Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
Contextual Info: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

DS30-P1241

Abstract: DS30-P2255 DS30-P1253 sick ds60 SICK distance sensor distance sensor p1241 optical N1241 SICK DS30-P2255 distance sensor SICK distance sensor ds60
Contextual Info: Distance Sensor DS30 The Distance Sensor DS30 – High performance The Distance Sensor comprises modern technology in a minimum of space – and is unbeatable value for money. The specification for the DS30 lies exactly between the distance sensor DS60/DS40 and the standard sensors for close-range distance measurement. Its capacity as a low-cost high performer sets new standards.

cafs-220

Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

HB Electronic Components

Abstract: HIP2100 HIP2100IB IRFR120 MS-012-AA TB379
Contextual Info: HIP2100 TM Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver • • • • • • • • • • • • • • Ordering Information HIP2100IB TEMP. RANGE oC PACKAGE -40oC to 85oC 8 Ld SOIC (N) Pinout 4022.3 Features The HIP2100 is a high frequency, 100V Half Bridge

HRC0203B

Contextual Info: HRC0203B Silicon Schottky Barrier Diode for Rectifying REJ03G0148-0100Z Previous: ADE-208-800 Rev.1.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.

AN9106

Abstract: HS-65647RH BOSSARD
Contextual Info: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs TM Application Note June 1992 The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the