DIODE BAY 12 Search Results

Diode BAY 45

Abstract: Diode BAY 89 41880
Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm

Diode BAY 21

Abstract: Diode BAY 46 ir 0588
Contextual Info: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode

Diode BAY 54

Contextual Info: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

60N03

Abstract: 60N035 60N035S Bay Linear 60N035T
Contextual Info: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

Diode BAY 55

Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

IR 822P

Abstract: B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad
Contextual Info: Bay Linear Inspire the Linear Power B8220 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features This specific line of Schottky diodes were specifically designed for both digital and analog applications. This series includes a wide range of specifications and

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

Diode BAY 80

Abstract: BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode
Contextual Info: FAIRCH IL D SE MI CO NDU CTO R S4 i F| DaBTBlb E J~- 3469 674 T A I R C H I U D ”SE MI C O N D U C T O R g g fg g ^ T S 84D 27296 BAY72/BAY80 - A Schlum berger C om pany T. PACKAGES BAY72 BAY80 ABSOLUTE MAXIMUM RATINGS N ote 1) T e m p e ra tu re s S torage Tem perature Range

laser Functional Block Diagram and

Abstract: automatic laser power control ADN2830 CW laser diode diode IN 5402 CW Laser Controller provides closed-loop temperature
Contextual Info: ADN2830—Average Power Controller for Continuous Wave CW Laser Features • Bias current range 4 mA to 200 mA • Monitor photodiode current 50 µA to 1200 µA • Closed-loop control of average power • Laser fail and laser degrade alarms • Automatic laser shutdown (ALS)

ultra FAST DMOS FET Switches

Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
Contextual Info: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless

tel 839b

Abstract: B849A HSMP-3892 B8394 389C sot363 marking code ca HSMP-3895 839B B8390 B839A
Contextual Info: Bay Linear Inspire the Linear Power B8390 Surface Mount RF PIN Switch Diodes Series Description Features The B-839x series is optimized for switching applications where low resistance at low current and low capacitance are required. The B-849x series products

Contextual Info: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is

Diode BAY 46

Abstract: TMJ9910 tangential TNJ9910 SM3 DIODE
Contextual Info: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available

TMJ9911

Abstract: SM3 DIODE 5-PIN
Contextual Info: ANALOG LEVEL DETECTOR TMJ9911 Available as: TMJ9911, 5 Pin TO-8 T5 TNJ9911, 4 Pin Sq. Surface Mount (SM3) BXJ9911, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available

Contextual Info: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted

54LS

Contextual Info: CD54HC00/3A CD54HCT00/3A S E M I C O N D U C T O R Quad 2-Input NAND Gate June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. 1 14 2 13 3 12 4 11 5 10 6 9 7 8 1A The CD54HC00/3A and CD54HCT00/3A logic gates utilize

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice: