DIODE B44 Search Results

BA314

Abstract: IEC134 UBC671 bb53
Contextual Info: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.

DIODE 1.0A 1000V

Abstract: DIODE B44 marking B44
Contextual Info: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Cathode mark 11 Lot No. B44 0 6 Abridged type name

diode b44

Abstract: ERB44 diode 1000V 10a marking B44 b4406
Contextual Info: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Cathode mark 11 Lot No. B44 0 6 Abridged type name

Contextual Info: l I T T °N ÏNB/LITTON SOLI» Litton SbE D • 55442GG 00004^5 b44 ■ LITT PRODUCT ANNOUNCEMENT Solid State Division 140 GHz InP GUNN DIODE • LOW COST POWER AT VERY HIGH FREQUNCY • RELIABLE SOLID STATE POWER SOURCE • HIGH EFFICIENCY, LOW VOLTAGE AND CURRENT

RB441Q40

Contextual Info: Diodes Schottky Barrier Diode RB441Q-40 •Applications •External dimensions Units: mm Low current rectification •Features Schottky barrier diodes 1) Glass sealed envelope 2)Small pitch enables insertion on PCBs 3)High reliability •Construction Silicon epitaxial

diode 1000V 10a

Contextual Info: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics Cathode mark

VQE 13E

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package

ka2 DIODE

Abstract: SD3553C DIODE B44
Contextual Info: Preliminary Data Sheets I2098 SD3553C.S20R SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST rectifier diode series 3500 A 2.0 µs recovery time High voltage ratings up to 2500 V High current capability Optimized turn on and turn off characteristics

diode 1000V 10a

Abstract: marking B44 b4406 DIODE B44 10MSA ERB44 DIODE 1.0A 1000V
Contextual Info: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications High speed switching 種 機 Maximum ratings and characteristics

DIODE B44

Abstract: I2097
Contextual Info: Preliminary Data Sheet I2097 SD2053C.S50R SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST rectifier diode series 2000 A 5.0 µs recovery time High voltage ratings up to 4500 V High current capability Optimized turn on and turn off characteristics

B4 diode

Contextual Info: SKiiP 12NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *#5   @ 5. '&0,  

semikron thyristor skt 16

Contextual Info: SKT 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 16 Features     

1M823-1

Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,

skiip25ac126v1

Abstract: Diode 6a8
Contextual Info: SKiiP 25AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$3  9 ,$3  1 ' 20    

L9959

Abstract: "MC 140" transistor B444 BU71 B444 MODULE L995 30S3 M206 T151 T460
Contextual Info: 2DI5OA-14OC50A )V /< 7 — POW ER TRA N SISTO R MODULE • ¡ t t S : Features • High Voltage • 7 ' ) - / + ^ U > ? 9 4 t — K rtflft • ASO A'TSv,' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications • Power Switching

Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the

EVK71-050

Abstract: SRFE T151 F25 transistor
Contextual Info: EVK71-050 75a POWER TRANSISTOR MODULE : Features • 7 V —ft 4 V • y < KrtSK Including Free Wheeling Diode High DC Current Gain • ÎÊ # t Wt Insulated Type •fflüÊ : Applications • Power Switching •A C t - ^ J » • DC ^ AC Motor Controls —9 W &

JU003

Contextual Info: 2DI5OZ-14O 50a * ± / < 7 - jE S > 3 . - ì W ’ Outline Drawings POWER TRANSISTOR MODULE : Features • ïf t liJ E High Voltage • 7 'J — Kfàjft • Including F re e w h e e lin g Diode Excellent Safe Operating Area • fôSiüJfé Insulated Type

EVK71-050

Contextual Info: EVK71-050 75A : Outline Drawings ' <7 - POW ER T R A N S IST O R M ODULE : Features • 7 y - * * y > ^ y -r * - • hFE*''S5L' • K rtu Including Free W heeling Diode High DC Current Gain Insulated Type 1 Applications • Power Sw itching • A C « - * * »

B245A

Abstract: k 151 transistor
Contextual Info: 2DI5OA-14O 50a ✓ * 9 — ,\ = 7 > j> 7 * 9 i ± / Ñn — í n .— ÌV : Outline Drawings j.- ;u POWER TRANSISTOR MODULE • i f è ë : F e a tu re s • & iiJ± High Voltage •7 U— U > ¥ ¥ 'f + — Krtflft • ASO •S Including Free W heeling Diode

B446

Abstract: transistor B446 SAL 41 B-446 2di50z application T151 B-447
Contextual Info: 2DI5OZ-14O 50a * ± / < 7 - jE S > 3 . - ì W ’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • ïf t liJ E High Voltage • 7 'J — Kfàjft • Including F re e w h e e lin g Diode Excellent Safe Operating Area • fôSiüJfé Insulated Type

stk audio power amplifiers

Abstract: D556 stk 80 w
Contextual Info: TTETSa? rZ J m 7# DD 4L .0 47 b44 • SGTH S G S -T H O M S O N [ » ^ » [IC T IiM O Û S STK 4 N3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30L . ■ . . ■ V dss RDS(on Id 300 V < 1 .4 Q 4 .2 A TYPICAL RDS(on) = 1.25 Q AVALANCHE RUGGED TECHNOLOGY

Contextual Info: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B44020, B44030 Date: September 2006  EPCOS AG 2007. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B44020, B44030 Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.