DIODE AY 101 Search Results

MI308

Contextual Info: , bEli tîflEtl DD17735 ANTENNA SWITCH 3TT • Ml308 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The M I3 0 8 PIN diode is employing a high reliability glass Dim ension: mm construction, designed for solid state antenna switchs in commercial tw o-w ay radios.

40MT160KPBF

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Power Modules FEATURED PRODUCTS Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules RESOURCES • For technical support, contact Modules@vishay.com

40MT160KPBF

Abstract: 160mt160kpbf
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Modules - Wide Range of Standard and Customizable Packages Power Modules Featured Products Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules

B 57 995

Abstract: DL306-XXXTG 347t VL308-436TG
Contextual Info: ADVANCED INTERCONNECTIONS Closed Frame LED Sockets 5 Energy W ay, P.O. Box 1019, W est W a rw ick, Rl 02893 • Tel. 4 0 1 -8 2 3 -5 2 0 0 • FAX 4 0 1 -8 23-872 3 o c Closed Frame LED Light Emitting Diode Sockets Co) °< m D> .300 (7.62) o o o o o o ft

Contextual Info: MOTOROLA Order this document by MUR10150E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M U R 10150E SCANSWITCH™ Power R ectifier For Use As A Damper Diode In High and Very High Resolution Monitors Motorola Preferred Device The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION

C101

Abstract: C-101-A C-101-B C-101-C CLA60 CLA60AA Senisys C101B
Contextual Info: FASCO I N D S / SE NIS YS 40E D 3*4^7311 0 0 0 1 2 4 b 0 O S E N I I lifA'.'IH j: l I C-101 Series 11' 4 1 - 8 3 Optically Coupled Isolators F e atu re s A b s o lu te M a x im u m R a tin g s Ta = 25<1C unless otherwise stated. • • • • • Storage and Operating to +100°C

1PS59SB21

Abstract: MARKING CODE 21
Contextual Info: DISCRETE SEMICONDUCTORS 1PS59SB21 Schottky barrier diode 1999 May 05 Product specification Supersedes data of 1998 Jul 28 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS59SB21 DESCRIPTION

BAV23S l31

Abstract: diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 Philips Semiconductors 1999 May 05 PHILIPS PHILIPS Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV199 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING

1PS302

Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS302 High-speed double diode 1999 May 06 Product specification Supersedes data of 1996 Oct 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed double diode 1PS302 FEATURES DESCRIPTION

FEI Microwave

Abstract: tb600 T750M ay54
Contextual Info: TABLE OF CONTENTS ATTENUATORS CHIP .SERIES PCA, PCAA . 6-7 HIGH POW ER. SERIES PPA .8 PILL, DROP-IN. SERIES P S A .9

Contextual Info: MITEL DS2012SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 KEY PARAMETERS VRRM 6000V IF av, 1015A ' fsm 16500A APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.

SMD diode sg 46

Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB151 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB151

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

Contextual Info: SFH615AA/AGB/AGR/ABM/ ABL/AY/AB 5.3 kV TRIOS Optocoupler High Reliability FEATURES • Variety of Current Transfer Ratios at 5.0 mA – AA: 50–600% – AGB: 100–600% – AGR: 100–300% – ABM: 200–400% – ABL: 200–600% – AY: 50–150% – AB: 80–260%

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

1N4148V

Contextual Info: H ig h - V o lt a g e E L I-a m p D r iv e r The IMP803 is an Electroluminescent EL lamp driver w ith the four EL lam p driving functions on-chip. These are the switch-mode pow er sup­ ply, its high-frequency oscillator, the high-voltage H-bridge lam p driver

181 PH diode

Abstract: 1PS75SB45 645 LEM
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Nov 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r double diode encapsulated in a S O T 4 1 6 SC 75 ultra

Contextual Info: CS8130 Semiconductor Corporation Multi-Standard Infrared Transceiver Features General Description • Adds IR port to standard UART • IrDA, HPSIR, ASK CW & TV remote compatible • 1200bps to 115kbps data rate • Programmable Tx LED power • Programmable Rx threshold level

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

BAT721A

Contextual Info: DISCRETE SEMICONDUCTORS BAT721 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Semiconductors 1999 May 06 PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES

Contextual Info: S i GEC P L E S S EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 4 3 0 8 -1 .2 ITE40F06/ITE40C06 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE Th e IT E 4 0X 06 is a robust n-channel, enhancem ent mode insulated gate bipolar transistor IG BT designed tor

transistor AY 6 smd

Abstract: smd code ab transistor SFH615AA SFH615AA-X006 SFH615AB SFH615ABL SFH615ABM SFH615AGB SFH615AGR SFH615AY
Contextual Info: SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V