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    DIODE APLICATION Search Results

    DIODE APLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE APLICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DT-670-SD

    Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
    Contextual Info: LakeShore DT-670 Series Silicon Diode Temperature Sensor Lake Shore’s DT-670 diode temperature sensors are the most advanced silicon diodes in Lake Shore’s extensive line of cryogenic temperature sensors. Backed by more than thirty years of excellence in cryogenic temperature


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    dt-670dt-670e-brdt-670a-sddt-670b-sd+8dt-670c-sddt-670d-sddt-670-sd-dt-670-sdsilicon diode dt-470dt 670 c culake shore cryotronicssilicon diode dt-670 PDF

    optical drive pdic dvd

    Abstract: SP8040 SP8042 PDIC dvd
    Contextual Info: SP8042 ADVANCED 12 Channel, PDIC FEATURES • Suitable for dual wave length laser diode ■ Compact package ■ Optical light detector ■ 6x read speed for DVD VO2 1 SW 3 VRF 4 APLICATIONS ■ DVD Player Rev. 4/10/03 12 GND VO1 2 10 VCC 12 Pin PDIC 9 VS


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    sp8042sp8040optical drive pdic dvdpdic dvd PDF

    IRGMVC50UD

    Contextual Info: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes


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    irgmvc50u20khzirgmvc50udirgmvc50uu+3o-2584ass452mil-s-19500 PDF

    IT71

    Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
    Contextual Info: International S Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz


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    irgmvc50u20khzo-258aairowc50u0+8irgmvc50uuwi-s-19smo-258it71we vqe 24 eg-115g-116g122 PDF

    N mosfet 100v 200A

    Contextual Info: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz


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    irgmic50u20khzirgmic50udirgmic50uu+3o-259g-114n mosfet 100v 200a PDF

    Contextual Info: STPS30SM60 Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K Description The STPS30SM60D is a single diode Schottky rectifier, suited for high frequency switch mode


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    stps30sm60stps30sm60do-220ac PDF

    Contextual Info: STPS20M60S Power Schottky rectifier Features • A K High current capability A ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K K A Description A The STPS20M60S is a single Schottky diode, suited for high frequency switch mode power


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    stps20m60sstps20m60sg-trstps20m60sro-220ab+1stps20m60st PDF

    Contextual Info: STPS20SM60S Power Schottky rectifier Features • A K High current capability A ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K K A Description A The STPS20SM60S is a single Schottky diode, suited for high frequency switch mode power


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    stps20sm60sstps20sm60sg-trstps20sm60sro-220ab+1stps20sm60st PDF

    G114

    Abstract: IRGMIC50U IRGMIC50UU G114 SOT-23-5
    Contextual Info: PD-9.813 International ü r ]Rectifier IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • Electrically Isolated • Hermetically Sealed • Simple Drive Requirements V CES = 600V fie*- 20kHz • Latch-proof • UltraFast operation > 10 kHz


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    irgmic50uo-259aa127foirgmic50ud+6irgmic50uumil-s-19500o-259g-114g114g114 sot-23-5 PDF

    Contextual Info: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode


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    stps20sm60co-220abo-220fpabstps20sm60ct+1stps20sm60cfp PDF

    Contextual Info: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode


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    stps20m60cstps20m60cg-trstps20m60cro-220ab+1stps20m60ct PDF

    STPS20

    Contextual Info: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode


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    stps20sm60co-220abo-220fpabstps20sm60cg-tr+4stps20sm60crstps20sm60ctstps20sm60cfpstps20 PDF

    MA4AGSBP907

    Abstract: MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode
    Contextual Info: AlGaAs Solder Bump Flip-Chip PIN Diode MA4AGSBP907 Rev 2.0 Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation


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    ma4agsbp907ma4agsbp907-tma4agsbp907-wlow forward voltage diode PDF

    Contextual Info: TK11850L APPLICATION MANUAL Step Up DC-DC Converter IC TK11850L CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . TYPCAL APPLICATION 5 . PIN CONFIGURATION 6 . BLOCK DIAGRAM 7 . STANDARD APLICATION CIRCUIT 8 . ABSOLUTE MAXIMUM RATINGS 9 . ELECTRICAL CHARACTERISTICS


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    tk11850lgc3-i008 PDF

    XC6375A

    Abstract: e68 DC 2SA1223 2SA122 2SA1213 MA735 XC6375 nichicon vR
    Contextual Info: XC6375 Series PWM Controlled, Step down DC/DC Converters HP010199 ◆ CMOS Low Power Consumption ◆ Operating Voltage: 2.2V~10.0V ◆ Output Voltage Range: 2.0V~7.0V ◆ Output Voltage Accuracy: ±2.5% ◆ Oscillator Frequency: 100kHz • Aplications ● Cellular phones, pagers


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    xc6375hp010199100khzxc6375a301+8xc6375a5012sa1223xc6375ae68 dc2sa1222sa1213ma735nichicon vr PDF

    RPR-363A

    Contextual Info: Page 1 of 5 Pri Specification M 1 . Part number Type R P R - 3 6 3 A ed o ft e ic a l switch R P R -3 6 3 A 2 . Construction GaAs Infrared Light Em itter,Silicon Planar Type Phototransistor 3 . Aplication All kinds of contoroller 4 . Dimension Fig-1 5 . Absolute Max Ratings


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    rpr-363a PDF

    Contextual Info: ø16 A6 Series Miniature Control Units Light duty in short 22mm body length. ••Features IDEC’s original mechanism for snap-action switching. Suitable for a wide variety of office and factory aplications. ••The LED lamp contains a current-limiting resistor and a


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    ul508e55996en60947-5-1gb14048 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    le79q22811n6761-12n2369au2n2907aub+6br17datasheet transistor si 6822dimming led aplicationsdimming led driver aplicationsgc4600ic zl70572 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7drf140045a, 1200v n-channel npt series igbtaptes80da120c3gapt35dl120hjsemiconductors cross referenceigbt triple modules 100a2000w mosfet power inverter PDF

    Contextual Info: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


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    fcpf190n60 PDF

    Contextual Info: FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


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    fcpf380n60 PDF

    Contextual Info: FCPF260N60E_F152 N-Channel SuperFET II MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


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    fcpf260n60e PDF

    Contextual Info: FCPF190N60E_F152 N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


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    fcpf190n60e PDF

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    o-92mkrc102mkrc112mo-92l+16ktn2369ktc3194ktc3197ktc3198ktc945bkia431china tv fbttransistor 2n3906 smd 2a sot23ts4b05gtransistor 2n3904 smd 2a sot23fbt tvkia7812apikia431a transistortransistor kia431achina tv uoc2n60 mosfet smps PDF