DIODE APLICATION Search Results
DIODE APLICATION Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE APLICATION Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DT-670-SD
Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
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dt-670dt-670e-brdt-670a-sddt-670b-sd+8 | |
optical drive pdic dvd
Abstract: SP8040 SP8042 PDIC dvd
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sp8042sp8040optical drive pdic dvdpdic dvd | |
IRGMVC50UDContextual Info: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes |
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irgmvc50u20khzirgmvc50udirgmvc50uu+3 | |
IT71
Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
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irgmvc50u20khzo-258aairowc50u0+8 | |
N mosfet 100v 200AContextual Info: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz |
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irgmic50u20khzirgmic50udirgmic50uu+3 | |
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Contextual Info: STPS30SM60 Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K Description The STPS30SM60D is a single diode Schottky rectifier, suited for high frequency switch mode |
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stps30sm60stps30sm60do-220ac | |
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Contextual Info: STPS20M60S Power Schottky rectifier Features • A K High current capability A ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K K A Description A The STPS20M60S is a single Schottky diode, suited for high frequency switch mode power |
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stps20m60sstps20m60sg-trstps20m60sro-220ab+1 | |
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Contextual Info: STPS20SM60S Power Schottky rectifier Features • A K High current capability A ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K K A Description A The STPS20SM60S is a single Schottky diode, suited for high frequency switch mode power |
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stps20sm60sstps20sm60sg-trstps20sm60sro-220ab+1 | |
G114
Abstract: IRGMIC50U IRGMIC50UU G114 SOT-23-5
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irgmic50uo-259aa127foirgmic50ud+6 | |
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Contextual Info: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode |
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stps20sm60co-220abo-220fpabstps20sm60ct+1 | |
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Contextual Info: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode |
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stps20m60cstps20m60cg-trstps20m60cro-220ab+1 | |
STPS20Contextual Info: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode |
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stps20sm60co-220abo-220fpabstps20sm60cg-tr+4 | |
MA4AGSBP907
Abstract: MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode
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ma4agsbp907ma4agsbp907-tma4agsbp907-wlow forward voltage diode | |
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Contextual Info: TK11850L APPLICATION MANUAL Step Up DC-DC Converter IC TK11850L CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . TYPCAL APPLICATION 5 . PIN CONFIGURATION 6 . BLOCK DIAGRAM 7 . STANDARD APLICATION CIRCUIT 8 . ABSOLUTE MAXIMUM RATINGS 9 . ELECTRICAL CHARACTERISTICS |
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tk11850lgc3-i008 | |
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XC6375A
Abstract: e68 DC 2SA1223 2SA122 2SA1213 MA735 XC6375 nichicon vR
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xc6375hp010199100khzxc6375a301+8 | |
RPR-363AContextual Info: Page 1 of 5 Pri Specification M 1 . Part number Type R P R - 3 6 3 A ed o ft e ic a l switch R P R -3 6 3 A 2 . Construction GaAs Infrared Light Em itter,Silicon Planar Type Phototransistor 3 . Aplication All kinds of contoroller 4 . Dimension Fig-1 5 . Absolute Max Ratings |
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rpr-363a | |
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Contextual Info: ø16 A6 Series Miniature Control Units Light duty in short 22mm body length. ••Features IDEC’s original mechanism for snap-action switching. Suitable for a wide variety of office and factory aplications. ••The LED lamp contains a current-limiting resistor and a |
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ul508e55996en60947-5-1gb14048 | |
LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
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le79q22811n6761-12n2369au2n2907aub+6 | |
SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
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10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7 | |
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Contextual Info: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior |
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fcpf190n60 | |
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Contextual Info: FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior |
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fcpf380n60 | |
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Contextual Info: FCPF260N60E_F152 N-Channel SuperFET II MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior |
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fcpf260n60e | |
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Contextual Info: FCPF190N60E_F152 N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior |
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fcpf190n60e | |
CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
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o-92mkrc102mkrc112mo-92l+16 | |