DIODE ALL Search Results
DIODE ALL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE ALL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode
Abstract: BAW* diode BAR99 FMMD2837 FMMD2838 FMMD7000 BAW74 FMMD2836 FMMD2835 FMMD914
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bas21bas20fmmd914bal99+14 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc10h065o-220acstpsc10h065dstpsc10h065di+3 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc6h065o-220acstpsc6h065dstpsc6h065g-tr+1 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc10h065o-220acstpsc10h065dstpsc10h065g-tr+1 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc6h065o-220acstpsc6h065dstpsc6h065di+3 | |
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Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc4h065o-220acstpsc4h065dstpsc4h065di+1 | |
transistor bu508afContextual Info: Products Search Home About Us Product News Application Message to Us Contact Us Diode Bridge | Superfast Diode | Ultrafast Diode | FRD Diode | STD Diode Products Category You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode |
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o-3pfa/sot-199/to-247fbu208abu208d2-16d3a+5 | |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc8h065o-220acstpsc8h065dstpsc8h065di+3 | |
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Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc10h065-ydocid026618 | |
DIODE A16
Abstract: 97a6 transistor A16 a15 diode
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o-220fa/to-218/to-p3bt131o-220bta10/btb10+6 | |
2sd1710Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS |
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2sc4760sc-562sc514bu208a+5 | |
d4515
Abstract: d209l transistor D208L
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o-126d1148dd1151d1160+7 | |
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Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS |
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o-126tip122o-220tip127+2 | |
transistor c4467
Abstract: mosfet a1694 C4467
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mt-2002sa1694/2sc4467a1694/c44672sa1694+6 | |
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TIP137 Darlington transistorContextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS |
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o-126tip122o-220tip127+4 | |
PC 13003 TRANSISTOR
Abstract: 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR
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tip42co-220tran-5000o-126+8 | |
transistors C106
Abstract: TO202 package transistor 2p4m
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o-20260/16ao-220bt151+4 | |
diode A25
Abstract: 75N80
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75nf75/75n80/75n08o-220/to-220f/to-263/to-252/to-251+6 | |
TSP70Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series |
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tsp2305atsp40gd120ptsp25g135to-247+4 | |
DO-218
Abstract: do218 "Fast Recovery Diode" invertor BYP30-600
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byp30-600do218do-218fast recovery diode+1 | |
Q265
Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
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1n485b1n6481n914b1n3066+9 | |
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Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
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ena1263la0225cva1263-4/4 | |
laser diode 405nm
Abstract: "Photo Diode" a1263 LA0225CV 405nm diode 71608 blue Laser-Diode 405nm laser diode la0225
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ena1263la0225cva1263-4/4laser diode 405nm+7 | |
transistor a1001
Abstract: 4 PC blue Laser-Diode la0225 405nm laser
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ena1001ala0225csa1001-4/4transistor a1001+4 | |