DIODE AA 119 Search Results

AA119

Abstract: diode aa119 DIODE AA 119 tfk 4 119 aa119 diode TFK 939 Germanium Diode aa119 germanium point contact diode diode tfk "Point Contact Diode"
Contextual Info: AA 119 'W Germanium-Spitzendiode Germanium point contact diode Anwendungen: Hochohmige Demodulatorschaltungen. Als Diodenpaar für Diskriminator- und Ratio­ detektorschaltungen. Applications: High impedance demodulator circuits. Matched pairs for discriminator and ratio detector

21l1

Abstract: 22L2
Contextual Info: Optointerrupter S p e c ific a tio n s H21L1, H21L2 Optointerrupter G aA s Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture MILLIMETERS ' sy m bo l!

DIN 50014 STANDARD

Abstract: K102P3 K1793 F119 K102 K102P2
Contextual Info: TELEFUNKEN ELECTRONIC w t> m IALGG a'jeoo'ìb o o o 7 ?si b K 102 P TTdtLIKFyMKiKI electronic Creative Technologies - - T ~ ÿ / - * 3 Optically Coupled Isolator C onstruction: Emitter: Detector: G aA s IR Emitting Diode Silicon N PN Epitaxial Planar Phototransistor

OL391N-03

Abstract: OL392N-03
Contextual Info: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and

Contextual Info: NOISE REDUCTION HIGH SPEED DIGITAL OUTPUT 8 PIN DIP PHOTOCOUPLER FEATURES • • DESCRIPTION_ HIGH ISOLATION VOLTAGE PS9611 and PS961 H a r e optically coupled isolators contain­ BV: 3,750 Vr.m.s. MIN ing a G aA IA s LED on the light emitting diode side input side

Contextual Info: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m ­ m u n icatio n s and various o th er types o f optical e q u ip m en t.

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA VRRM = 600 V lFAV = t[r = 250 ns TO-240 AA V_ V_ 600 MEA95- 06 DA 600 1 2 95 A 3 MEK 95- 06 DA 3 1 2 3 i_ - i i _ Symbol Test C onditions

95-06DA

Contextual Info: DIXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA RRM 'FAV t rr = 600 V = 95 A = 250 ns TO-240 AA 600 RRM Type V MEA95-06 DA 600 1 Symbol Test Conditions ^FRMS Ifav 1 Ifrm Tease = T case = Ifsm T VJ l2t MEK 95-06 DA 2 1 2 Maximum Ratings

50-90mm

Abstract: 95-06DA
Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A trr = 250 ns 3 TO-240 AA 2 VRSM V 600 V RRM 1 Type V MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 3 Symbol Test Conditions I FRMS IFAV ① I FRM Tcase = 75°C Tcase = 75°C; 180° sine

DIODE 03

Abstract: MAX6326 MAX6375 MAX6381 MAX6801 AN1195
Contextual Info: SUPERVISORY/VOLTAGE MONITOR CIRCUITS Application Note 1195: Sep 09, 2002 Maximize Battery Life and Minimize Replacements The MAX6326 µP supervisor is used in an application to provide a battery switchover circuit when the wall adapter is disconnected. The reset output drives an external

automotive microprocessor

Abstract: AN1195 APP1195 MAX6326 MAX6375 MAX6381 MAX6801 Diode 0.6V
Contextual Info: Maxim > App Notes > AUTOMOTIVE MICROPROCESSOR SUPERVISOR CIRCUITS Keywords: uP supervisor, voltage monitoring, battery-power, push-pull, reset output, microprocessor supervisor Sep 09, 2002 APPLICATION NOTE 1195 Maximize Battery Life and Minimize Replacements

30PA104-AML

Abstract: LED 020 AML21 30PA101-AML AML26G
Contextual Info: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.

MICRO SWITCH AML 20 SERIES

Abstract: AML26G AML26 AML21 SERIES
Contextual Info: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.

2f5 transistor

Contextual Info: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable

VL250

Contextual Info: SIEMENS LH 1191 High-Voltage SoUd State Relay • FEA TU R ES • • • • • • 1500 Vrms input/output isolation High-surge capability Low ON-resistance Clean, bounce-free switching dv/dt typically better than 500 V/|is Low power consumption • Monolithic IC reliability

AML20 SERIES

Abstract: AML30 aml20 AML11G AML 30 series AML23EBA2 AML59-S AML60 AML13 AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON
Contextual Info: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.

thyristor control arc welding rectifier circuit

Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150

MICRO SWITCH AML 30 SERIES

Abstract: MICRO SWITCH AML 20 SERIES PUSHBUTTON MICRO SWITCH AML 20 SERIES AML20 AML30 30PA101-AML AML 20 SERIES SQUARE RED AND WHITE PUSH BUTTON AML10 AML27 aml 20
Contextual Info: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.

Contextual Info: Advanced Power MOSFET E R F W FEATURES /I8 4 0 A B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VOS= 500V

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

MOSFET IRF840

Abstract: sec irf840 SEC IRF 640 power MOSFET IRF840 IRF840 n-channel mosfet mosfet-irf840 IRF 250V 100A IRF 640 mosfet IRF840
Contextual Info: IRF840 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 Î1 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

21N60

Abstract: a 1712 mosfet s300h 21N55 247 AA
Contextual Info: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous

irf 729 power mosfet

Abstract: irf 729 IRF MOSFET driver IRFP440 IRF 250V 100A
Contextual Info: IRFP440 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 cn ^DS on = ♦ Rugged Gate Oxide Technology 0 .8 5 Î1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V