DIODE A46 Search Results

DIODE A46

Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Contextual Info: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

zener diode A29

Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

SCHOTTKY 20A 40V

Abstract: a465
Contextual Info: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

j10016

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,

yg805c06

Abstract: YG805C06R IO120
Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

10IOA

Abstract: P151 T151 T460 T930 TS802C06 SS003 ior P151
Contextual Info: TS802C06 ioa '> a y h + - / < '; 7 '^ V + - K SCHOTTKY BARRIER DIODE : Features • S IE ft£ * < T O Surface mount device • 1&VF Low VF Super high speed switching. Connection Diagram High reliability by planer design • £ i & : Applications High speed power sw itching.

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

TF5G

Abstract: H R C M F 2J ir1f ESAC61-004 SC-65
Contextual Info: E S A C 6 1 - 0 4 1 2 A ’ Outline Drawings SCHOTTKY BARRIER DIODE : Features • i&vF JEDEC Low VF • X -f EIAJ SC-65 X tT - K tf # * « * .' Super high speed switching. Connection Diagram High reliability by planer design : Applications High speed power switching.

TS802C06

Contextual Info: TS802C06 ioa : Outline Drawings '> 3 SCHOTTKY BARRIER DIODE : Features Surface mount device JEDEC EIAJ ’ Low VF Super high speed switching. • f v —r - m m c • U S t ifc j s s s iu s t t Connection Diagram High reliability by planer design . rT^ : Applications

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

TS802C09

Abstract: Collmer SC
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

KE 10A DIODE

Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

a467

Abstract: TS802C09 ts802c PUAR
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

802C06

Contextual Info: T S 802C 06 ioa '> a y h+ — * < U T ¥ 4 # — K SCHOTTKY BARRIER DIODE I Features Surface mount device • teVF Low V f • 7 .4 "J? > V * . M - KA * # * C iS I ' Super high speed switching. m nu&m Connection Diagram High reliability by planer design.

30S3

Abstract: AH20 T151 TS802C04 TS802
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE I Features m Surface m ount device. • t e VF Low V f Connection Diagram Super high speed sw itch in g . • T V - * - * S 1± High reliability by planer d e s ig n , I Applications High speed pow er s w itc h in g .

ESAC61-004

Abstract: SC-65 a469 esac61 SCHOTTKY -004
Contextual Info: E S A 6 C 1 - 4 i 2 A SCH O TTKY BARRIER DIODE ^ Features 1&VF Low V f * 4 " /T X V -V ic & i' Super high speed switching. im t t t Connection Diagram SH4 High reliability by planer design : Applications High speed power switching. M axim um Ratings and Characteristics

erc12 diode

Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
Contextual Info: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight

diode ars1

Abstract: IR151
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

A461

Abstract: TS802C04
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

a461

Abstract: TS802C04
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

A461

Contextual Info: TS802C04 ioa '> a 'y h + —*'< l) T ÿ ' i J r — K SCHOTTKY BARRIER DIODE • J& S : : Features • mm Surface m ount device. • flSV F Low V f • T A 'y + 's V * I f - FA"'# $ ' C onnection D iagram Super high speed sw itchin g. • 7V —j — iiffilciSigff