DIODE A316 Search Results
DIODE A316 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE A316 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
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je1100mfc8040mfc8030mc1316+6 | |
a-316
Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
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era82-004a-316code diode transientcv marking code diode transient+2 | |
CV marking code diode transient
Abstract: ERA82-004 a316 j
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era82-004cv marking code diode transienta316 j | |
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Contextual Info: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF Low V F IS t]\ : M a r k in g *3 7 Super high speed switching. • - a —K : C3 Color code •W hite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J '& O ft |
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era82-004i95t/r89 | |
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Contextual Info: HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple bar or rod magnet. The A3161ELT and A3161 EUA are identi |
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a3161elta3161 | |
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Contextual Info: HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple bar or rod magnet. The A3161ELT and A3161EUA are identi |
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a3161elta3161eua | |
4007A
Abstract: A3160 NE 3160
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a3160a31304007ane 3160 | |
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Contextual Info: HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple bar or rod magnet. The A3161ELT and A3161 EUA are identi |
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a3161elta3161 | |
hall effect sensor 3144
Abstract: 2-phase hall effect driver
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a3161elta3161euahall effect sensor 31442-phase hall effect driver | |
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Contextual Info: A3161 Hall-Effect Switch for 2-Wire Applications Not for New Design These parts are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of this device is currently restricted to existing customer applications. |
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a3161a3361ea3362e | |
A1150 transistor
Abstract: 240 LT change over switch circuit diagram AMS-702 Diode LT 442
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a3161a1150a1150 transistor240 lt change over switch circuit diagram+2 | |
240 LT change over switch circuit diagram
Abstract: diode LT 229 Diode LT 410 GH-068 hall current sensor 3A Hall-Effect IC Applications Guide lt 719 A3161 A3161ELT A3161EUA
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a3161a3361ea3362e240 lt change over switch circuit diagram+8 | |
Diode LT 410
Abstract: lt 719 A3161 A3161ELT A3161EUA GH-068 hall effect sensor ugn 3019 diode LT 229 Application Note 27701
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a3161a3361ea3362ediode lt 410+7 | |
TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
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lcd01television eht transformersbyw96e phsmd code z9p+7 | |
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spf 9001 sanken
Abstract: SANKEN power supply sanken transistor Shortform Transistor Guide militar capacitors strs6709 sanken power transistor 2SA1216 semiconductors cross reference power supply SAMSUNG MONITOR str str 6707 diagram guide
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ams-127bspf 9001 sankensanken power supplysanken transistor+7 | |
AH 503 hall sensor
Abstract: schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram
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ams-127bah 503 hall sensorschematic diagram power supply str f6654schematic diagram power supply str f6656+7 | |
diode a316Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus Transceiver MC74VHCT245A The M C74VHCT245A is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining |
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c74vhct245adl203mc74vhct245adiode a316 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus Transceiver M C 74VH C 245 The M C 7 4 V H C 2 4 5 is an a d v a n c e d high s p e e d C M O S o c ta l bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining |
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c74vhc245/d | |
A3144
Abstract: Current sensor and Hall sensor HALL-EFFECT SWITCHES
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ats610ats640ats63xah-006-5+6 | |
ic 3524 pin diagram
Abstract: A3212ELH UGN3235K UGN3503U A3056EU A3056LU A3058EU A3058LU ATS610 ATS612JSB
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ats610ats640ats63xah-006-5+10 | |
KA 3052v
Abstract: 8120-s ka 7042 back-emf motor ugn3503 3122V 8033s
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12-bit20-bit32-bit10-bit+7 | |
UGN 3075
Abstract: UGs 3030 UGN3177 APPLICATION NOTE unipolar stepper motor 6812 KA 3050C LT 3958 SI-3120C ugn 3019 HALL SENSOR UGN 3235 UGN3235
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ams-173c20-bit32-bit10-bit+11 | |
ic 3524 internal block diagram
Abstract: Ratiometric Linear Hall-Effect Sensor 3 PIN hall effect sensor ic 3524 pin diagram ATS63X A3121ELL FH-001 A3422LKA UGN3503UA UGN3235K
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ats610ats640ats63xah-006-5+10 | |
ic 3524 internal block diagram
Abstract: ic 3524 pin diagram ic 4518 applications ic 3525 internal block diagram magnetic transducers "Hall Effect Sensors" A3056EU UGN3235K A3056LU A3058EU
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ats535ats640ats63xah-006-5+12 | |