DIODE A2 9 Search Results

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

STPS20

Contextual Info: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS40SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS40SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS30M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30M60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS30SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

STTH602CBY

Contextual Info: STTH602C-Y Automotive ultrafast recovery diode Datasheet  production data Features • Suited for SMPS ■ Low losses A1 ■ Low forward and reverse recovery time A2 ■ High surge current capability ■ High junction temperature K Description A2 K This dual center tap diode is suited for switch

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ A1 A2 K A1 I2PAK STTH1002CR TO-220AB STTH1002CT

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

VSO05561

Abstract: A7s marking diode
Contextual Info: BAV 99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol

Contextual Info: STTH1002C High efficiency ultrafast diode Datasheet - production data Features A1 • Suited for SMPS K A2  Low losses  Low forward and reverse recovery times  Insulated package: TO-220FPAB  High junction temperature  Low leakage current A2

Contextual Info: STPS50U100C ULVF power Schottky rectifier Features A1 • ultralow forward voltage drop ■ high current capability ■ high frequency operation K A2 Description s ct du A2 A1 The STPS50U100C is a dual power Schottky diode rectifier, suited for high frequency switch

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148W SOD-123 PLASTIC PCAKAGE 1N4148W= A2 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

1N4148w SOD-123

Abstract: 1N4148W a2 1N4148W continental SOD123
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148W SOD-123 PLASTIC PCAKAGE 1N4148W= A2 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

STTA5012TV1

Abstract: STTA5012TV2
Contextual Info: STTA5012TV1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 25A VRRM 1200V trr (typ) 60ns VF (max) 1.9V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012TV1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

Contextual Info: STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK