DIODE A1S Search Results

A1s sot23

Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
Contextual Info: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

ze 003

Abstract: ZUA SOT23 ZCA TRANSISTOR ze 003 ic transistor E23 ZCA transistor sot 23 ZCA SOT-23 marking CODE ZUA SOT23 sot-23 MARKING CODE ZCA sot 23 zua
Contextual Info: DTC143 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Z+A1SA Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

DTA143

Abstract: transistor DTA144 DTA144
Contextual Info: DTA144 EM/EE/EUA/ECA/ESA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

ZCA TRANSISTOR

Abstract: marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142
Contextual Info: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

MARKING CODE SOT23 A1S

Abstract: BAW56 BAW56S BAW56T BAW56U BAW56W BCW66H SC74 SC75 A1s sot23
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! ,  , " ,  Type BAW56 BAW56S BAW56T

Contextual Info: 6RI50E 50 a POWER DIODE MODULE : Features • <'>*<—'>3>?-'ym 7 Glass Passivation Chip • J È i l & A ' l i P Easy Connection • fê it Insulated Type : A p p lica tio n s • Inverters • /<-yT-U— Battery Chargers • f i i ï fi Æ— DC Motors

Contextual Info: n ix Y S Single Phase Rectifier Bridge V RSM V RRM V V 700 900 1300 600 800 1200 V RRM VBO 21-06N 07 VBO 21-08N 07 VBO 21-12N 07 *dAV Tc = 100°C , module Maximum Ratings A A T v j = T vjm V R= 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine 85 90 A A

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

A1sHB

Abstract: marking A1sHB 6/18/smd diode A8
Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2301DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 ● RDS ON ＜ 150mΩ (VGS = -2.5V) 0.55 ● RDS(ON) ＜ 100mΩ (VGS = -4.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● VDS (V) = -20V 0.4 3 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

l 7251 3.1

Abstract: ft03e
Contextual Info: int ! MOBILE PENTIUM Il PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz Fully compatible with previous Intel microprocessors Supports the Intel Architecture with Dynamic Execution

variable oscillator

Abstract: MC33501 MC33503 NCS2001 NCS2200 dual zener diode 3B piezoelectric film sensor
Contextual Info: AND8054/D Designing RC Oscillator Circuits with Low Voltage Operational Amplifiers and Comparators for Precision Sensor Applications APPLICATION NOTE Jim Lepkowski Senior Applications Engineer Christopher Young Engineering Intern, Arizona State University

chopper transformer winding 24v

Abstract: SMPS SCHEMATIC DIAGRAM 36 Volt SMPS CIRCUIT DIAGRAM USING TRANSISTORS 24 volt output smps design 12 volt smps Circuit diagram SMPS SCHEMATIC DIAGRAM 12 Volt SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS 12V unipolar STEPPER MOTOR 7.5 L6280 circuit diagram of 12 volt smps power supply
Contextual Info: L6280 THREE CHANNELS MULTIPOWER DRIVER SYSTEM PROGRAMMABLE CONFIGURATION CHANNELS 1 AND 2 OUTPUT CURRENT UP TO 1A (CHANNELS 1 AND 2) 1 SENSE PER CHANNEL OUTPUT CURRENT CHANNEL 3 UP TO 3A DIRECT INTERFACE TO MICROPROCESSOR C-MOS COMPATIBLE INPUT INTERNAL DC-DC CONVERTER FOR LOGIC

um1233

Abstract: HONEYWELL MODULATOR MOTOR RS7660 siemens servo motor connector tms 1601 Burr Brown PWR 74 ORP 12 SIMATIC S5-100u programming cable 014374 SN 576B
Contextual Info: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.

Phototransistor SP 201

Abstract: Phototransistor sp 201 c PC17T1 E107486 K-104 100S 17T4 K-101 K-102 u50m
Contextual Info: 1 L \ PHO TO C O U PLER J Photocmip Ier PC 17T1, 17T2, 17T4 P C - 1 7 T K 2 .4 .« , G a A s iS * 1 - 3 g ^ ? '< * - K < i:'> U ïm -ïm h h DIMENSIONS Unit:mm 7 > '> 'Z 2 t it S l& - £ t > - \ t f c y * I ' A T ’^ T 'T o P C - 1 7 T 2 li2 ? + PC-17T1

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

Contextual Info: Revised April 1999 SEMICONDUCTOR T M 74VCX16601 Low Voltage 18-Bit Universal Bus Transceivers with 3.6V Tolerant Inputs and Outputs General Description Features The VCX16601 is an 18-bit universal bus transceiver which combines D-type latches and D-type flip-flops to allow data

BDT64C

Abstract: BOT64 BOT64B
Contextual Info: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.