DIODE A1 Search Results

Contextual Info: DPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD5 The DPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must

APT0502

Abstract: APTDF400U120G fast recovery diode 1a 1200v
Contextual Info: APTDF400U120G Single diode Power Module VCES = 1200V IC = 400A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers

S3 DIODE schottky

Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

MARKING C SOD882

Abstract: nxp Standard Marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

a12 SOT363

Abstract: W1 sot 363
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Preliminaty Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications

SMD MARKING CODE s4

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

BAP70-03

Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

fast recovery diode 54

Abstract: BYC10-600CT BYC5-600 BYV29
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

A12 diode

Abstract: diode 0450
Contextual Info: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

BAP64-05

Abstract: DIODE marking S4 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 NXP Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

"marking code D2"

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP63-03 Silicon PIN diode Product specification Supersedes data of 2001 May 18 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP63-03 FEATURES PINNING • High speed switching for RF signals PIN

SOP-8L

Abstract: hall effect sensor 720 DIODE marking 8L SENSOR NTH 209 zener diode marking 4x AH280 410 hall 8L 05A
Contextual Info: AH280 Hall-Effect Smart Fan Driver „ Features „ General Description - On chip Hall plate - Built-in Zener diode protection for output driver - Built-in protection diode for power reverse connecting - Rotor-lock detection - Automatically restart after release of motor

RURG30120CC

Abstract: URG30120C
Contextual Info: RURG30120CC Data Sheet January 2000 File Number 3400.3 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted

R3060P2

Abstract: R3060P ISL9R3060P2 TB334
Contextual Info: ISL9R3060P2 Data Sheet May 2001 30A, 600V Stealth Diode Features itle UF7 3P The ISL9R3060P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

BAS21AHT1G

Abstract: marking AA SOD-323
Contextual Info: BAS21AHT1G Low Leakage Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant LOW LEAKAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage

ZENER 18- 2 5t

Abstract: marking code zener diode 5D Zener Diode marking 5T ZENER DIODE 5K
Contextual Info: BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A —Wide zener voltage range selection : 2.4V to 75V —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

MARKING 77s

Abstract: Q62702-A118 BAS70-07W EHA07008 Q62702-A1186
Contextual Info: SIEMENS BAS70-07W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 4 1 o- -~o 3 o- W EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

UDFN10

Abstract: SP3010 SP3010-04UTG UDFN-10 sp3010-04 Littelfuse TVS Diode Array
Contextual Info: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP3010 Series SP3010 Series 0.45pF Rail Clamp Array RoHS Pb GREEN The SP3010 integrates 4 channels of ultra-low capacitance rail-to-rail diodes and an additional zener diode to provide

RHR30120

Abstract: rhr30120c RHRG30120CC TA49041
Contextual Info: RHRG30120CC Data Sheet January 2000 File Number 3411.3 30A, 1200V Hyperfast Dual Diode Features The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

nxp power diode

Contextual Info: BYV25FX-600 Enhanced ultrafast power diode Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 1.2 Features and benefits „ High thermal cycling performance

TS4148C

Abstract: A12 smd
Contextual Info: TS4148C RCG 200mW High Speed SMD Switching Diode Small Signal Diode 0603 A B Features —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant