DIODE 98A Search Results

U-LD-98A041A-preliminary

Abstract: U-LD-98A041A laser diode 980nm 100mw laser diode 100mw laser diode 980 nm
Contextual Info: U-LD-98A041A-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98A041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

U-LD-98A046D-preliminary

Abstract: U-LD-98A046D TO-CAN laser diode 980nm 100mw laser diode 100mw laser diode 980 nm Optronics
Contextual Info: U-LD-98A046D-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98A046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: SOT-23 PIN Diodes SMP1352-001 Features SOT-23 • Surface Mount SOT-23 Package 0.030 0.8 mm 3 PLCS. ■ High Voltage Switching PIN Diode 0.070 (1.8 mm) ■ Low Forward Resistance Attenuator PIN Diode 0.035 (0.9 mm) 3 PLCS. ■ Priced for High Volume Wireless

Contextual Info: ESAlpha PI Attenuator PIN Diode SMP1307-019 SOT-143 Features • 3 PIN Diodes in SOT-143 Package I - 2 0.041 (.85 mm mm) |— - ■ Low Distortion PIN Diode Design S. 0.071 0.075 1(1.8 mm)h mm)V I- \(1.9 1 ■ Wide Resistance Dynamic Range 0.047?

diode 98A

Contextual Info: 4 Diode PI Attenuator SMP1307-027 5 Lead SOT Features • 4 PIN Diodes in 5 Lead SOT Package 0.083 2.1 mm MAX. 0.067 (1.7 mm) MIN. ■ Low Distortion PIN Diode Design 0.118 (3.0 mm) MAX. 0.087 (2.2 mm) MIN. ■ Wide Resistance Dynamic Range 0.069 (1.75 mm) MAX.

Contextual Info: ESAlpha Low Inductance Shunt PIN Diode SMP1322-017 Features 9OT-143 • High Isolation Switching Diode >20 dB at 900 MHz 0 .0 7 9 I - “ 1 2 m m r - E_ ■ Low Insertion Loss 0 .0 7 5 71 <1 -8 r (1 .9 171171^ ■ Standard SOT-143 Package (1.2 mm) I

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR

Contextual Info: Preliminary Technical Information IXFK98N50P3 IXFX98N50P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 = = 500V 98A  50m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions

ixxn200n60b3h1

Abstract: IXXN200N60B3 200n60
Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

SOT-227B

Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

1N2155

Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Contextual Info: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward

Contextual Info: Schottky Barrier Diode Data Sheet RB056L-40 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 2.6±0.15 1) Small power mold type 4.2 5.0±0.3 4.5±0.2 lFeatures 1.2±0.3 2.0 2.0 0.1±0.02 1 2 (PMDS) PMDS 2.0±0.2 1.5±0.2

Contextual Info: Schottky Barrier Diode Data Sheet RB160MM-30 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 3.5±0.2 0.12 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability

5sdd06d6000

Contextual Info: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties § Low forward voltage drop § Low recovery charge § High operating temperature § Low leakage current Key Parameters = 6 000 V RRM = 662 I FAVm = 10 500 I FSM = 1.066 V TO

diode ring mixer

Abstract: ALPHA INDUSTRIES M18L
Contextual Info: ESAlpha Lead Surface Mount Mixer M 18L Features • Low Conversion Loss 6.5 dB Typ. ■ High Isolation 28 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Description Pin Out The M18L is designed to be used in wireless systems that

M25L

Abstract: diode ring mixer
Contextual Info: ESAlpha Leaded Surface Mount Mixer M 25L Features • Low Conversion Loss 5.0 dB Typ. ■ High Isolation 25 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Pin Out Description The M25L is designed to be used in wireless systems that

PL78C0

Abstract: infra red infra red diode
Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-t o-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.

diode ring mixer

Abstract: M38L ALPHA INDUSTRIES
Contextual Info: ESAlpha Leaded Surface Mount Mixer M 38L Features • Low Conversion Loss 5.0 dB Typ. ■ High Isolation 25 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Pin Out Description T he M 38L is designed to be used in w ireless/V SAT

AN1001

Abstract: IRFBA90N20D
Contextual Info: PD - 94300C SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023W 98A† Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRFBA90N20D

Abstract: AN1001
Contextual Info: PD - 94300 SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023Ω 98A† Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

AN1001

Abstract: IRFBA90N20D
Contextual Info: PD - 94300A SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023Ω 98A† Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See