DIODE 9.1 B3 Search Results

1n53338

Abstract: 1N53348
Contextual Info: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

mad1108P

Abstract: RC05 resistor 74HC125 dip RC05 RCO5 RESISTOR RC05 center tap transformer 18 0 18 74HC04 74HC04 NOT GATE datasheet 74HC04 equipment
Contextual Info: LXD332 — Evaluation Board for T1/E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document known as LXD332 — Evaluation Board for T1/E1 Applications. Order Number: 249220-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

2N2646 motorola

Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
Contextual Info: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:

A2 zener diode

Abstract: zener diode 2.7 b2 zener diode A3 zener diode B3 A2 9 zener diode zener diode B2 Zener Diode C3 4 Zener Diode B1 9 Zener Diode C3 5 5.6 B1 zener diode
Contextual Info: HZ xx Series VOLTAGE 1.6 ~ 38 V, 500 mW Silicon Planar Zener Diode for Stabilized Power Supply Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-35 FEATURES Ø 2.0 56.2 z Low leakage, low zener impedance and

zener diode A3

Abstract: C2 3 zener diode HITACHI HZS-L rd 9.1 b2 HZS6L zener Diode B2 diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode 9.1 b3

Abstract: diode Lz 99 zener diode A3 hz6a-2l 5.6 B1 zener diode HZ6L A2 zener diode HITACHI HZ-L ADE-208-118A HZ7L
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode HZ27L-3

Abstract: hz11l
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

A2 zener diode

Abstract: 5.6 B1 zener diode 9.1 b2 diode rd 9.1 b2 52Y Diode
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e

9.1 b2 diode

Abstract: diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode zener mark C2 6

Abstract: HZS7L diode HZS11L A2 zener diode C2 6 zener diode ADE-208-121A B1 6 zener HZS7LA1 Zener Diode C3 4 5.6 B1 zener diode
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: SGS-mOMSON LHÊÎB«« BZW06-5V8,B376,B BZW06P5V8,B/376,B TM TRANSIL FEATURES • PEAK PULSE P O W ER - 600 W @ 1 ms ■ STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR . FAST RESPONSE TIME . UL RECOGNIZED

Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

B2 Zener

Abstract: A2 9 zener diode zener mark code C1 zener diode B3 Hitachi DSA00776 zener diode c2 HZ16L a3 6 zener zener diode A3 zener diodes color coded
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

motorola eb20

Abstract: 2N4871
Contextual Info: MOTOROLA SC D IO D ES/O PTO 3TE D H b3ti7SSS DDf iEbSS 7 • NOT RECOMMENDED FOR NEW DESIGNS P N Unijunction Transistors f10T7 T-37-JII 2N4870 2N 4871 S ilic o n U nijunction T ran sisto rs . designed for pulse and timing circuits, sensing circuits, and thyristor trigger

Zener Diode B1 axial

Abstract: 5100 b2 zener 5.1 B2 B2 Zener b3 zener HZ24 HZ27 HZ11 Zener Diode A2 axial HZ15
Contextual Info: DETRONTM HZ Series Zener Diode DO-35 Glass max. 0.52 Features . Low reverse leakage . Low zener impedance . Maximum power dissipation of 500 mW . High stability and high reliability min. 27.5 1.8 0.2 3.8 0.2 CATHODE MARK Mechanical Data min. 27.5 Case: DO-35 Glass

smd zener diode code J1 b2

Abstract: smd zener diode code B2 Zener diode smd marking code b3 Zener diode smd marking e2 SMD ZENER DIODE E1 smd diode sod-323 marking code a2 Zener Diode SOD-323 marking code a2 Zener diode smd marking N1 diode smd marking SOD323 5-6 Zener Diode SOD-323 smd code 5-6
Contextual Info: Zowie Technology Corporation MM3Z5221BH~MM3Z5267BH SILICON PLANAR ZENER DIODES Lead free product PINNING Halogen - free type PIN Silicon Planar Zener Diode in a small plastic DESCRIPTION 1 Cathode 2 Anode SMD SOD-323 package 2 1 Features • Total power dissipation: Max. 300 mW

Contextual Info: LH Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability 4. Small surface mounting type Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature

zener 3.3 b2

Abstract: Zener Diode C3 5 zener 5.1 B2 zener diode 2.7 b2 zener 2a1 zener diode 2.4 b2 2A2 zener diode c3 zener 4.7 B2 zener 5.6 B1 zener diode
Contextual Info: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175

Industrial DC Motor

Abstract: PSMN059-150Y
Contextual Info: PSMN059-150Y N-channel TrenchMOS standard level FET Rev. 01 — 5 May 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

Contextual Info: BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

diode Lz 99

Abstract: HITACHI HZS
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.

TRLEV25048A-150213A

Abstract: dimmable LED driver SSL4120T
Contextual Info: UM10722 SSL4120DB1123 - 90 W 1.9 A CC dimmable isolated LED driver demo board Rev. 1.1 — 20 October 2014 User manual Document information Info Content Keywords SSL4120T, LED driver, dimmable, isolated, demo board, power factor corrector, PFC, resonant, LLC, burst mode

HITACHI HZ

Abstract: zener diode 2.4 b2
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.