B3L72S Search Results

BAV70

Contextual Info: MOTOROLA SC -CDIODES/OPTOJ { Im »F|b3L72S5 6367255 MO TO R O L A SC D I O D E S / O P T O 34C D03ÖS4B h 38243 D T ' 0 2 - of SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high­

369A-10

Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Contextual Info: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET

hc595a

Abstract: 74HC595A SS125 LS595 MC54/74HC595A HC595 MC54HCXXXAJ MC74HCXXXAD MC74HCXXXAN ON Semiconductor HC595A
Contextual Info: MOTOROLA SC HE LOGIC 0 | b3L72S2 0000^41 D | Order this data sheet by MC54HC595A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 54/74H C 595A Advance Information 8-Bit Serial-lnput/Serial- or Parallel-Output Shift Register with Latched 3-State Outputs J SUFFIX

2N5190 MOTOROLA

Abstract: N5191 2N5190 C 3311 transistor LT 7706 d 317 P 2n transistor Motorola transistors 2N5192
Contextual Info: MOTORCLA SC XSTRS/R F T'3Ò 12E D | b3L72SM Q0ÛMS30 5 I 2N5190 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5192 SILICON NPN POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS SILICON NPN . . . for use in power amplifier and switching circuits, — excellent safe

1N53888

Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
Contextual Info: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

IN3024

Abstract: TIL 121 opto IN3016B IN3051A in3827 1N3821 IN3042 1N3016A 1N3051A IN3330
Contextual Info: MOTOROLA s c -c d i o d e s / o p t o j 12E D I b3L72SS DQTTñET 1N3821 thru 1N3830 MOTOROLA SEMICONDUCTOR SERIES TECHNICAL DATA 1N3016A thru 1N3051A D e s i g n e r s D a ta , S h e e t , SERIES 1.0 WATT METAL SILICON ZENER DIODES . . . a com plete series o f 1.0 W att Zener Diodes w ith lim its and

Contextual Info: bS E D • b3L72Sl MOTOROLA 00ññt,37 M44 MOTOROLA SC N0T3 { M E M O R Y / ASI SEMICONDUCTOR TECHNICAL DATA MCM62T316 Product Preview 8K x 16 Bit Synchronous Cache Tag With Comparator The M C M 62T316 is a 131,072 bit synchronous static random a ccess m em ory

Motorola MPSU02

Abstract: SILICON SMALL-SIGNAL DICE
Contextual Info: 'MOTOROLA SC O I O D E S / O P T O } 6367255 34 MOTOROLA SC DE | b3L72SS 003A05L DIODES/OPTO 34C • 38026 D 7"-3 3 - 0 5 - SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) ' MPSUC01 DIE NO. — NPN LINE SOURCE — DEL501 This die provides performance similar to that of the following device types:

HC157A

Contextual Info: MOTOROLA SC LOGIC H E D I I b3L72S5 0000=135 5 _ Order this data sheet by MC54HC157A/D MOTOROLA SEMICONDUCTOR 7 ' - ¿ y - j/ s / TECHNICAL DATA M C 5 4 / 7 4 H C 1 5 7 A Advance Information Quad 2-Input Data Selectors/ M ultiplexers J SUFFIX CERAMIC CASE 620-09

XMMAS40G10D

Abstract: XMMAS40G10S
Contextual Info: ^ OTOROLA Qrd thj document SEMICONDUCTOR TECHNICAL DATA Preliminary Information by XMMAS40G/D XM M AS40G10D XM MA S40G 10S M icrom achined A ccelerom eter ± 4 0 g A m p lifie d MICROMACHINED ACCELEROMETER ±40g AMPLIFIED The MMAS40G family of silicon capacitive, m icro-m achined accelerometers

Reeves hoffman vcxo

Abstract: mecl data MC12061
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC12061 Crystal Oscillator The MC12061 is for use with an external crystal to form a crystal controlled oscillator. In addition to the fundamental series mode crystal, two bypass capacitors are required plus usual power supply pin bypass

MRF5711LT1

Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as

LM311MA

Abstract: 311J-8 111J-8 lm311 motorola
Contextual Info: nOTOROLA SC -CTELECOMJ Gl b3b7E53 OGflDSEq T 6 3 6 7 2 53 MOTOROLA SC TE L E C O M 0 1E 8 Ö5 2 4 D LM 111 MOTOROLA LM 211 LM 311 HIGHLY FLEXIBLE VOLTAGE COMPARATORS The ability to operate from a single power supply of 5.0 to 3 0 volts or ± 1 5 volt split supplies, as commonly used with operational ampli­

Contextual Info: Order this data sheet by MRF10500H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10500H’ Microwave Pulse Power Transistor 500 Watts Peak NPN 1025-1150 MHz C FTÌ0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

MPC971

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M PC970 MPC971 Low V oltage PLL C lock D river The MPC970 and MPC971 are 3.3V compatible, PLL based clock driver devices targeted for high performance RISC or CISC processor based systems. The MPC970 and MPC971 are identical except for the

Contextual Info: Order this document by LM350/D M M O TO R O LA —— — — LM350 Three-Term inal Adjustable Output Positive Voltage Regulator T he LM 350 is an adjustable three-term inal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V

Contextual Info: <g> M O T O R O L A Pulse Width Modulation Control C ircuit The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. Functions included in this 1C are a temperature compensated voltage

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54190B MCM5L4190B MCM5V4190B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54190B is a 0.6n C M O S high-speed dynam ic random a ccess m em ory. It is organized as 262,144 e ighteen-bit w ords and fabricated with C M O S siiicon-gate pro­

4170B

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Octal D -iy p e Latch w ith 3-S tate Output MC74VHC573 The MC74VHC573 is an advanced high speed CMOS octal latch with 3-state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while

ICS RS 3197

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 8 0 B is a 0 .6 j C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .

LTZM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon M PS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage Rating v EBO 6.0

54c150

Contextual Info: M O T O R O L A SC - C L O G I O 05 D E ] b3fci7g5S 0 0 A D 4 2 E T 6 3 6 7 2 5 2 MOTOROLA SC L O G IC 02E 8 0 4 2 2 D-T-£Ta-o7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC367 H ex 3 -S ta te Noninverting B uffer w ith Separate 2-B it and 4-B it Sections