DIODE 85C Search Results

cree Sic

Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago

CSD06060A

Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago

Contextual Info: Series M50 Diode 60-100Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable

Contextual Info: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general

AK2573A

Abstract: AK2573AVB C101 620CH
Contextual Info: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

NX7300BA-CC

Abstract: STM-16
Contextual Info: 1310 nm InGaAsP NX7300BA-CC MQW-FP LASER DIODE NX7300CA-CC COAXIAL MODULE FOR 2.5 Gb/s FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm The NX7300BA-CC and NX7300CA-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC STM-16
Contextual Info: 1310 nm InGaAsP NX7300BA-CC MQW-FP LASER DIODE NX7300CH-CC COAXIAL MODULE FOR 2.5 Gb/s FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm The NX7300BA-CC and NX7300CH-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

laser diode pinout

Abstract: laser diode to56 to56 dfb laser diode 1550nm FWHM LED 1310 nm fiber coupled TO56 package laser diode FP 1550nm laser diode for 10Gbps TOcan FP TO-56
Contextual Info: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with

1550nm laser diode 4 mW 5 Ghz

Abstract: 1310nm laser diode for 10Gbps 10Gbps TOcan 1550nm laser diode 10 Ghz
Contextual Info: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with

km 3703

Abstract: Laser-Diode 1550 nm 0 dBm NX8504BE-CC NX8504CE-CC
Contextual Info: NEC's 1550 nm InGaAsP MQW DFB NX8504BE-CC LASER DIODE IN COAXIAL PACKAGE NX8504CE-CC for 622 Mb/s APPLICATION FEATURES DESCRIPTION • PEAK EMISSION WAVELENGTH: λP = 1550 nm NEC's NX8504BE-CC and NX8504CE-CC are 1550 nm Distributed Feed-Back DFB laser diode coaxial modules with

Contextual Info: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with

GT32T

Contextual Info: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Mode! type selected. T he basic current con­

PQ-49

Contextual Info: ANALOG DIODE PHASE SHIFTERS SERIES PQ CONTINUOUSLY VARIABLE — 0.1-18 GHz GENERAL INFORMATION An analog phase shifter continuously changes the phase of a microwave signal by varying a D.C. voltage. Since the D.C. voltage applied to the diode is a reverse bias, the current drain is negligible

IXLD02SI

Abstract: IXLD02 lem la 55 p Directed Energy LEM LTA
Contextual Info: IXLD02SI Differential 2A Ultra Fast Laser Diode Driver Features General Description • • • • • • • The IXLD02 is an ultra high-speed differential laser diode driver. The IXLD02 is designed specifically to drive single junction laser diodes in a differential fashion. A Q output and

NX7301BA-CC

Abstract: NX7301CA-CC
Contextual Info: NEC's 1310 nm InGaAsP MQW FP NX7301BA-CC LASER DIODE IN COAXIAL PACKAGE NX7301CA-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm NEC's NX7301BA-CC and NX7301CA-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.

NX8300BG-CC

Abstract: NX8503BG-CC NX8503CG-CC
Contextual Info: NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • PEAK EMISSION WAVELENGTH: λP = 1550 nm NEC's NX8503BG-CC and NX8503CG-CC are 1550 nm Coaxial Module DFB Distributed Feed-Back laser diode with

PD-LD

Contextual Info: PD LD CWDM 1.3~1.6um Band Laser Diode Modules Inc. CWDM 1.3~1.6um Band Laser Diode Modules PD-LD Inc. offers a complete selection of CWDM DFB Lasers for the O+E+S+C+L+B regions. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well

Contextual Info: tSENSITRON 85CNQ015 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 832, REV.- ULTRA LOW REVERSE LEAKAGE PLASTIC POWER SCHOTTKY RECTIFIER 15 V, 80 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

Contextual Info: SENSITRON SEMICONDUCTOR 85CNQ015 TECHNICAL DATA DATA SHEET 832, REV.- ULTRA LOW REVERSE LEAKAGE PLASTIC POWER SCHOTTKY RECTIFIER 15 V, 80 A Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Features:

Contextual Info: IFSM IF av Vrrm Amps Volts MAX MIN Vfm IRM TJ Volts mA C MAX MAX MAX (60Hz) @ TC SPECIFICATION Amps °C DIODE: Schottky Max. FST 80 Amp. (D61-3SM) Part # Cross Ref. : FST8315SM 85CNQ015SM 80 15 78 0.36 20 100 800 FST8320SM 87CNQ020SM 80 20 135 0.44 1.5 150

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

phototransistor 600 nm

Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
Contextual Info: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION