DIODE 8008 Search Results

904nm

Abstract: GaAs 904nm diode s 360 904nm laser diode LA390 LA330 ld330
Contextual Info: LASER DIODE INC 1SE D | SBflE^flS □□□G4ÖS D | * - ~ '* g 5 > 1 0 D , LASER DIODE, INC._ LA-300 SERIES LD-3 T ' " tfl"P s r GaAs and GaAlAs LASER DIODE ARRAYS FOR PULSED OPERATION FEATURES ► High Efficiency a t Low Drive Currents

manual g081pu series

Contextual Info: Manual of 808nm Fiber Coupled Laser Diode Module G081PU1600M G081PU1750M G081PU11500M G081PU25W G081PU210W G081PU315W G081PU325W 02.04.2012 Manual G081PU Series 1 of 10 1 Introduction Thank you for choosing this high power fiber coupled Laser Diode for your application.

Contextual Info: MAX14588 Evaluation Kit General Description The MAX14588 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX14588 adjustable overcurrent and overvoltage protector. The EV kit features TVS diode on input and Schottky diode

BPC808-40C-622

Abstract: 808nm laser 808nm Oclaro OCLARO laser ausn submount
Contextual Info: 40W 808nm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC808-40C-622 Features: • Mounted 10mm laser diode bar • Passive 1” x 1” Cu block cooler • 30% fill factor 150µm emitter / 500µm pitch • 40W operating power •

diode 8008

Abstract: TH-C1725-P TH1725
Contextual Info: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

Contextual Info: TH-C1725-S I TH-C1730-S 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-S products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar". The bar is mounted with the active zone P side

tsha 5201

Abstract: TSHA5202 TSHA520 TSHA5200 TSHA5201 TSHA5203
Contextual Info: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA620

Abstract: TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203
Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

650nm 5mw laser

Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |

5819 DIODE

Abstract: 13B1 GM5BW05340AC
Contextual Info: PRODUCT DOCUMENTATION Sharp Optoelectronic Components GM5BW05340AC Light Emitting Diode Issue Date: Jan. 27, 2005 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: ESD8008 ESD Protection Diode Low Capacitance Array for High Speed Data Lines The ESD8008 is designed specifically to protect four high speed differential pairs. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage

TSHA5202

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

Contextual Info: GP2W0002YP IrDA Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.7 V to 5.5 V • In circuit design, make allowance for the degradation of light emitting diode output that results from long continuous operation 50% degradation/5 years .

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

FUH -29A001B

Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Contextual Info: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in

Contextual Info: ESD8008 ESD Protection Diode Low Capacitance Array for High Speed Data Lines The ESD8008 is designed specifically to protect four high speed differential pairs. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage

Contextual Info: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides