DIODE 6A 1000V Search Results

6A4 DIODE

Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Contextual Info: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004

RURP6120CC

Contextual Info: RURP6120CC 6A, 1200V Ultrafast Dual Diode January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1

RURP6120CC

Contextual Info: RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

RURP6120CC

Contextual Info: RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE 2 CATHODE ANODE 1

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

diode 1334

Abstract: RHR6120C RHRP6120CC TA49058
Contextual Info: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode July 1996 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time

diode 1334

Abstract: RURP6120CC
Contextual Info: RURP6120CC S E M I C O N D U C T O R 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 Title HRP 20C bt A, 00V pert al ode utho rpoon, pert al ode, ache ergy ted, 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode January 1996 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC TO-220AB o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

IC 7805

Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)

Diode B2x

Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

QM300HA-2H

Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

f12n10

Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: KBU6005 THRU KBU610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A Outline Dimensions and Mark KBU VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: KBL6005 THRU KBL610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A Outline Dimensions and Mark KBL VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS

APT10090BFLL

Abstract: APT10090SFLL
Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET BFLL TO -2 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering

DD 127 D

Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT10090BFLL

Abstract: APT10090SFLL
Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET 0.950 BFLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering

Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.950 BLL POWER MOS 7 MOSFET TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

APT10090BLL

Abstract: APT10090SLL JESD24
Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET BLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering