DIODE 6390 Search Results
DIODE 6390 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
![]() |
Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
![]() |
Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 6390 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
DL-4146-101
Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
|
Original |
||
JDSU 6390 laser diode
Abstract: 6390-L3 diode 6390 600 um laser fiber medical 915nm
|
Original |
6390-L3 JDSU 6390 laser diode diode 6390 600 um laser fiber medical 915nm | |
DL-3147-060
Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
|
Original |
405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v | |
Contextual Info: Product Bulletin 5 W Ultra-Reliable FiberCoupled Laser Diode 6390-L3 Series JDS Uniphase's ultra-reliable 6390 series laser diodes offer 5 W of laser power from a 100 µm fiber into 0.2 NA. The L3 package is a redesign of the existing fiber-coupled L2 package, incorporating |
Original |
6390-L3 | |
JDSU 6390 laser diodeContextual Info: Product Bulletin 5 W Ultra-Reliable FiberCoupled Laser Diode 6390-L3 Series JDS Uniphase's ultra-reliable 6390 series laser diodes offer 5 W of laser power from a 100 µm fiber into 0.2 NA. The L3 package is a redesign of the existing fiber-coupled L2 package, incorporating |
Original |
6390-L3 JDSU 6390 laser diode | |
T1929N
Abstract: T380N T869N 5384 diode
|
Original |
T380N T869N T1929N T1929N T380N T869N 5384 diode | |
7688
Abstract: T1929N T380N T869N diode 3428
|
Original |
T380N T869N T1929N Thyrist69N 7688 T1929N T380N T869N diode 3428 | |
T1929N
Abstract: T380N T869N
|
Original |
T380N T869N T1929N T1929N T380N T869N | |
Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
|
OCR Scan |
3030blD C86093E 200ns 910nm C86093E 900to gaseous lasers C86083E 910nm laser rca rca 019 1200cu general electric laser 910nm | |
JDSU 6390 laser diode
Abstract: jdsu laser diode 980 nm JDSU laser diode JDSU pump laser manual diode laser pump JDS uniphase EDFA JDSU pump 980 GR-468-CORE laser diode jdsu radiator of diode
|
Original |
4800PUMP 5378-JDSU JDSU 6390 laser diode jdsu laser diode 980 nm JDSU laser diode JDSU pump laser manual diode laser pump JDS uniphase EDFA JDSU pump 980 GR-468-CORE laser diode jdsu radiator of diode | |
china DVD player lens circuit diagram
Abstract: DVD player lens circuit diagram IS1684 polarized beam splitter IR3C09 05Z6.2 2 way video splitter circuit diagram optical pickup unit sharp CD DVD is1685 DVD laser pickup assembly
|
Original |
IS1682E IS1622 IS1623 IS1640 IS1650 IS1684 HT321S china DVD player lens circuit diagram DVD player lens circuit diagram IS1684 polarized beam splitter IR3C09 05Z6.2 2 way video splitter circuit diagram optical pickup unit sharp CD DVD is1685 DVD laser pickup assembly | |
transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
|
Original |
||
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
|
Original |
DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl | |
|
|||
ic 6 pin smd for power supply led
Abstract: transistor D13003 X D13003
|
Original |
ACT364 ACT801 120VAC) 350mA 700mA G/16V, ic 6 pin smd for power supply led transistor D13003 X D13003 | |
APT80GA60LD40Contextual Info: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT80GA60LD40 APT80GA60LD40 O-264 | |
APT80GA60LD40
Abstract: MIC4452
|
Original |
APT80GA60LD40 APT80GA60LD40 MIC4452 | |
Contextual Info: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT80GA60LD40 O-264 | |
Contextual Info: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT80GA60LD40 APT80GA60LD40 | |
T1929N
Abstract: T380N T869N thyristoren
|
Original |
T380N T869N T1929N T1929N T380N T869N thyristoren | |
Contextual Info: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance |
Original |
Si8425DB 842xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si8425DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a, e 0.023 at VGS = - 4.5 V - 9.3 0.027 at VGS = - 2.5 V - 6.2 0.040 at VGS = - 1.8 V - 5.1 Qg (Typ.) 36 nC TrenchFET Power MOSFET Low-on Resistance |
Original |
Si8425DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
2322 734 61003L
Abstract: 2322 730 91002L ssl2101t zener diode phc 2322 724 61003L zener PH-C GRM31CR61C106KC31L diode N1004 zener diode phc 47 fusistor
|
Original |
UM10342 SSL2101 SSL2101, UM10342 2322 734 61003L 2322 730 91002L ssl2101t zener diode phc 2322 724 61003L zener PH-C GRM31CR61C106KC31L diode N1004 zener diode phc 47 fusistor | |
T1929N
Abstract: T380N T869N
|
Original |
T380N T869N T1929N T1929N T380N T869N |