DIODE 5L Search Results

11-5B2

Abstract: E67349 TLP722 TLP722F VDE0884
Contextual Info: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . 4 3 5LJZ JJ lU TLP722 : Single circuit

11-5B2

Abstract: E67349 TLP722 TLP722F VDE0884
Contextual Info: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage

Contextual Info: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r

BAS45L

Abstract: S18B
Contextual Info: SbE D m 711DÖ5b 0DMD1Ö7 T1D « P H I N PHILIPS INTERNATIONAL BAS 45L SbE D T -O T -tS LOW LEAKAG E DIODE FOR SURFACE M OUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-8 O envelope w ith lead/tin-plated metal

if4g

Contextual Info: ESC021M-15 5A FAST RECOVERY DIODE : Features • s .a i4 T v , Dam per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. Insulated package by fully molding. Connection Diagram High voltage by mesa design.

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

5lc2

Abstract: diode 5LC2 5LC2 U
Contextual Info: Super Fast Recovery Diode Twin Diode • ftfflS I OUTLINE Package I E-pack DE5LC20U Unit ; mm Weight 0.326g Typ W •M 200V 5A ®@ ® Feature 6.6 • SM D • SM D •e y -rx • Low Noise • trr=35ns • trr=35ns 5LC2 Date codc Main Use • Sw itching Regulator

AC input filter Capacitor

Abstract: 1300707
Contextual Info: Heater-Cathode Twin Diode Construction .Octal T-12 B a s e . 5 Pin, B5-15 Basing . 5L Outline .12-14

FF200R06ME3

Contextual Info: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S20JC10 Unit : mm Package I MTO-3P Weight 6.1g Typ> 100 V 20 A 4 Feature I • T j=i5(rc • Tj=150°C • High lo Rating •<5lR=0.7mA • L o w Ir = 0 .7 itiA • a m a s s e u c c i' • Resistance for thermal run-away

Contextual Info: Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

diode case R-1

Abstract: 02 diode R-1 02 diode case R-1 DO-41-MINI
Contextual Info: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction

Contextual Info: SKR 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKR 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JKL *&1.+-) 1+ 81=-

5D6 diode

Contextual Info: SKN 2F17 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 :<8='&1+( >.()&-)- 81=- ?$@ AB +( 56CDE 3FG $HFI &<+-) 1+ 81=$HKI *&1.+-) 1+ 81=-

Contextual Info: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Low forward voltage drop

H8 SOT-23

Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum

bv609

Contextual Info: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum

Contextual Info: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum

ZENER 18- 2 5t

Abstract: marking code zener diode 5D Zener Diode marking 5T ZENER DIODE 5K
Contextual Info: BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A —Wide zener voltage range selection : 2.4V to 75V —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

smd marking YF

Abstract: Diode marking m7 marking code YF diode smd m7 TU-101 TC-10 R3T marking diode smd marking code catalog max6532 D1FM3
Contextual Info: Schottky Barrier Diode Single Diode mtmm o u t lin e Package I 1F D1FM3 30V 5A 'C athode mark Feature r | l eS e -n • Small S M D • V f=0.46V • <5lR=0.1mA Unit I mm Weight 0.058k T yp m (M G> - H «g) • Low V f =0 .4 6 V • Low lR -0.1m A T yp e No.