DIODE 4C Search Results
DIODE 4C Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 4C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NJW4710
Abstract: NJW4710VE1
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njw4710njw4710ve1200mhz500mhz+2 | |
NJW4710
Abstract: NJW4710VE1
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njw4710njw4710ve1200mhz500mhz+2 | |
diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
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fmmd914bav70bav74bav99+10 | |
diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
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fmmd914bav70bav74bav99+15 | |
silicon general 16 pin ceramic dip JContextual Info: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight |
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sg6100/sg6101100masg6100sg6101+5 | |
mo299
Abstract: TAC10 lt416 LHS01
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lm960632n3904mo299tac10+2 | |
C405
Abstract: CMPSH05-4C
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cmpsh05-4cot-23f100ma500ma+2 | |
LMH6525
Abstract: High-Frequency Modulation Laser cd dvd
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lmh6525lmh6526lmh6525/lmh6526lmhtm6525/6526+1 | |
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Contextual Info: SONY SLP323V High Power Density 1 W Laser Diode Package Outline_Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method*’ . Compared to the R tr« SLD300 Series, this laser diode has a high brightness |
OCR Scan |
sld323vsld300slp323v | |
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Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
4385airgb5b120kdo-220o-220ab+1 | |
DL-3147-021Contextual Info: Ordering number : EN5861 Red Laser Diode D L -3147-021 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current is achieved by a strained |
OCR Scan |
en5861dl-3147-021 | |
NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
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nx8570nx8570sd409d766d+7 | |
1583 Series
Abstract: 362d 766d
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nx85711583 series362d766d | |
2N3904 331 transistor
Abstract: lm63
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snas190d2n39042n3904 331 transistorlm63 | |
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SKN 21 DIODE
Abstract: diode skn 21 THYRISTOR sct
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skn 21 diodediode skn 21thyristor sct | |
LM63CIM-16
Abstract: LM63 lm63c1 2N3904 LM63CIMA LM63DIMA
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2n3904lm63cim-16lm63lm63c1+2 | |
DIODE 4d
Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
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200ma400maaug-0529-sep-09+11 | |
A3020Contextual Info: PD - 94385 IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
irgb5b120kdo-220o-220aba3020 | |
IRF1010
Abstract: IRGB5B120KD CT311 transistor 2 SC 9246
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94385dirgb5b120kdo-220o-220ab+3 | |
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Contextual Info: PD - 94385B IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
94385birgb5b120kdo-220o-220ab | |
USER-CONFIGURE
Abstract: 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331
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2n3904user-configurelm63lm63cima+6 | |
arl5213
Abstract: ARL-5213RGBC red blue diode ARL-5213RG
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arl-5213rgbc/4carl5213arl-5213rgbcred blue diode+1 | |
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Contextual Info: LM64 LM64 ±1°C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO's Literature Number: SNAS207 LM64 ± 1˚C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO’s General Description Key Specifications The LM64 is a remote diode temperature sensor with PWM |
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snas207mmbt3904tlm64 | |
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
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hsn278wkhzc10hzc11hzc12+16 | |