DIODE 4937 Search Results

1E-017

Abstract: diode in 4937
Contextual Info: 1N 4933.1N 4937 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A

Contextual Info: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

diode 4937

Contextual Info: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

40N60A4D

Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347
Contextual Info: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These

40N60A4D

Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
Contextual Info: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input

40N60A4

Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST
Contextual Info: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input

40N60A4D

Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
Contextual Info: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input

diode 4937

Abstract: diode 1N 4937 diode IN 4937
Contextual Info: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 

Contextual Info: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 

in 4937

Contextual Info: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features                 8  9  3  9  9 + /+  3  9  9 +   9 

1N4148 1206

Abstract: 1n4148 0805 Fenghua Advanced Technology 1n4148 LL34
Contextual Info: 广东风华高新科技股份有限公司 Fenghua Advanced Technology holding Co., Ltd 厚膜片式二极管 THICK FILM CHIP DIODE 特点 Features 符合 ROHS 指令要求 According with RoHS standard 等同于 1N4148 电子特性 The electrical performance is equal as that of 1N4148.

HP 5082-7415

Abstract: MCI4489 5082-7415 HP 7415 MC68HC811A2 j 5804 MC14489 1 -10v led dimmer d 12 pin 2 digit LED display HP 5082 fdk ct
Contextual Info: MOTOROLA S EM IC O N D U C TO R TECHNICAL DATA MC14489 Advance Information M u lti-C h a ra c te r L E D D isp lay/Lam p D river rffi CMOS The MC14489 is a flexible light-emitting-diode driver w hich directly interfaces to individ­ ual lamps, 7-segment displays, or various combinations of both. LEDs wired with common

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

finisar i2c

Abstract: finisar 2025 finisar fiber optic transmitter module finisar AN-2025 finisar app note FTR1319 FTR-8519
Contextual Info: Finisar App Note AN-2025 Using the Finisar GBIC I2C Test/Diagnostics Port INTRODUCTION Finisar’s new line of optical GBIC modules incorporates the real-time optical link control system that Finisar pioneered in its previous generation of fiber optic transceivers. Finisar has extended the capabilities of the module definition

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

diode BA 159

Abstract: in4937
Contextual Info: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g

TRANSISTOR D1960

Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
Contextual Info: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5

N4937

Contextual Info: 1 N 4933.1 N4937 Schnelle Silizium Gleichrichter Fast Silicon Rectifier 1A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 600 V Plastic case Kunststoffgehäuse - DO-41 Weight approx. Gewicht ca. ¿ 0.8 0.4 g

4937n

Abstract: S 2563 NTMS4937NR2G s2563 n-channel mosfet vgs 3v
Contextual Info: NTMS4937N Power MOSFET 30 V, 13.6 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTMS4937N Power MOSFET 30 V, 13.6 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4937n

Abstract: NTMFS4937NT1G NTMFS4937NT3G
Contextual Info: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4937n

Contextual Info: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS