DIODE 40B Search Results

diode rj 93

Contextual Info: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage

BAW62

Contextual Info: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage

Contextual Info: BB240 _ J V. VHF VARIABLE CAPACITANCE DIODE The BB240 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M Hz in all-band tuners. The diode is encapsulated in the hermetically sealed glass envelope SOD-80 suitable for surface mounting.

Contextual Info: DIODE T H R E E P H A S E S B R ID G E T Y P E DF40BA Power Diode Module D F 40B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

Contextual Info: SIEMENS BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Code Pin Configuration Package 1 white Q62702-B664

AME40

Abstract: AME40AEAS AME40AEAT AME40AEET AME40BEET AME40BEHA sot-23 Marking s1
Contextual Info: AME, Inc. Micropower Voltage Reference Diode AME40 n General Description n Key Features The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a

ANALOG MICROELECTRONICS

Abstract: AME40 AME40AEAS AME40AEAT AME40AEET AME40BEET AME40BEHA 241 SOT-23 Analog devices TOP marking Information
Contextual Info: Analog Microelectronics, Inc. Micropower Voltage Reference Diode AME40 n General Description n Key Features The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a

Contextual Info: Super Fast Recovery Diode mtm OUTLINE Diode Module D1 20 L C 4 0 B 400V 120A Feature •*aaum • High lo Rating • trr=100ns • trr= 100ns • Isolation type Main Use • Semiconductor Process Machine • High power source • FA • Factory Automation

Contextual Info: O K I electronic components OLP222 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAl As infrared light emission diode sealed with a glass lens in a To18 case. Its light emission wave is peaks at 910 nm. Because of its sharp directivity, multiple units

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

Contextual Info: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

Contextual Info: Key Parameters VRRM = 200 IFAVM = 6130 IFSM = 45 VF0 = 0.80 rF = 0.030 Rectifier Diode V A kA V mΩ 5SDD 40B0200 Doc. No. 5SYA 1154-01 Feb-99 Features • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

Contextual Info: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

ED 05 Diode

Abstract: MS-9600
Contextual Info: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Ω Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

2sd1652

Contextual Info: SavantIC Semiconductor Product Specification 2SD1652 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal deflection output applications

capacitor tnr 471

Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

ERZC14DK911

Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

Contextual Info: OPTO DIODE CORP SSE D • b S G l ^ ß 0D00127 40b H O P D HIGH-POWER GaAIAs T-13/4 !R EMITTERS OD-8810, OD-8811 FEATURES • Cost effective plastic package • Super high power output • 880nm peak emission • High reliability LPE IRLED chips • High quality packaging

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit

Contextual Info: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit

bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Contextual Info: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2