DIODE 39C Search Results

5Z27 DIODE

Abstract: zener diode diode zener 18v 1w bidirectional zener ZENER 5z27 1W 10V ZENER DIODE RD zener diode zener 6v diode zener- diode toshiba zener
Contextual Info: 9097250 TOSHIBA DIS C R E T E / O P T O 39C 0 2 3 8 5 D 7 e //" 2 3 ZENER DIODE, BI-DIRECTIONAL ZENER DIODE TOSHIBA -CDISCRETE/OPTO* BT DE | I C H 7SS0 000S3ÖS T |~~ • ZENER DIODE 5Z27 • CHARACTERISTICS TYPËT- I'lEM P m ax IRSM m ax 5W 5Z27

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

30GWJ2C11

Abstract: 12-25B1A 30GWJ2C12 30FWJ2C11 30FWJ2C12 1225B1 12-39A1A TOSHIBA RECTIFIER TF150t
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 0 '7~-St2rÒ5' 39C 023^5 RECTIFIER STACK (SCNQTTKY BARRIER DIODE STACK) ~3T DE I TOTTSSD 0005345 fl | . 30GWJ2C11 Unit 40V 30A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak Reverse 30FWJ2C11 Voltage 30GWJ2C11 Average Output Rectified Current (Fig. 1)

1S265 Zener Diode

Abstract: 1S262-1S303 1S265 zener 150v 1w DIODE 39c 1s298 1S303 1S272 2.LZ9.1 1S256
Contextual Info: 1 9097250 TOSHIBA S ZENER DIODE D IS C R E T E / O P T O ! 39C 02384 D TW / TOSHIBA -CDISCRETE/OPTOJ 1Z6.2— 1Z30 6,2V ~ 30V Voltage Tolerance Value : ±10% I 1S262— 1S303 I MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CH ARACTER ISTICS ‘ (Ta MAXIMUM RATINGS (T a

3-13A1A

Abstract: 30DG15 30BG15 30CG15
Contextual Info: 39C 02259 9 0 9 7 2 50 TOSHIBA DISCRETE/OPTO 3 e] DE J ^ Cn72SD Ü pöi'/r HIGH-EFFICIENCY DIODE G O D S S Ì 11] 4 Unit in min 30PG15 200V 30A MAXIMUM RATINGS C H A R A C TER ISTIC 30BG15 Repetitive Peak 30CG15 Reverse Voltage 30DG15 Average Forw ard Current

2sc4762

Abstract: DIODE 39c diode 1a 1500v
Contextual Info: SavantIC Semiconductor Product Specification 2SC4762 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display

15DG15

Abstract: DIODE 39c 15BG15 15CG15
Contextual Info: 9097250 TOSHIBA DI S C R E T E /O P T O O T~'02>-Jr7 39C 02258 HIGH-EFFICIENCY DIODE 1Ä dF | cí ü cí 7HS0 0D 02SSñ H Unit in an 15DG15 200V 15A M A X IM U M RATINGS CH AR ACTER ISTIC 15BG15 Repetitive Peak 15CG15 Reverse Voltage 15DG15 Average Forward Current

IS1832

Abstract: diode 1800v 0.5a TFR1L
Contextual Info: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

60GWJ2C11

Abstract: DIODE 39c 60FWJ2C11 diode average rectified output current
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 Z 3 4 6 D RECTIFIER STACK (SCHOTTKY BARRIER DIODE STACK) TOSHIBA -CDISCRËTE/0PT03- 60GWJ2C11 40V 3T Dff| ^ 7 5 5 0 00023Mt. 0 60A -U n it in BB' MAXIMUM RATINGS C H A R A C T E R IS T IC R A T IN G SYM BOL 6 0 F W J2 C 1 1

1BH62

Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage

200JH21

Abstract: toshiba 3-60B1A
Contextual Info: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

skiip 613 gb

Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Contextual Info: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

4C3 zener

Abstract: GLZ4.3B zener 4c3
Contextual Info: GLZ SERIES 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction     500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

39A zener diode

Abstract: diode zener 33c diode zener 22c GLZ56 minimelf 15A
Contextual Info: GLZ2.0 ~ GLZ56 500mW SUFACE MOUNT ZENER DIODE FEATURES • Planar Die construction MINI-MELF / LL-34 • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb

3GH61

Contextual Info: 9097250 TOSHIBA <D I S C R E T E / O P T O _ FAST RECOVERY DIODE 1500V O T* 6 ^ DE I T G T T S S D DDD E SM S T TOSHIBA -CDISCRETE/OPTOJ 1S2711 39C 0 2242 Unit in Bn 1.5 A MAXIMUM RATINGS C H A R A C T E R IS T IC SYM BO L U N IT R A T IN G V rrm 1500

toshiba 6jg11

Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Contextual Info: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage

DIODE 39c

Abstract: 1S2777 TVRIG 1S2775 1S2776 251C diode 1BA TVR1D 125X3
Contextual Info: 9097250 TOSHIBA FAST RECOVERY DIODE TVR1J 600V 39C 02238 <D IS C R E T E / O P T O In dF I t DT V S S O 0 0 0 2 2 3 Û 7 U n it in 0 .5 A M AXIMUM RATINGS C H A R A C T E R IS T IC TVR1B TVR1D R epetitive Peak R everse Voltage TVR1G TVR1J Average F orw ard C urrent

ir20d

Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Contextual Info: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G

30JG11

Abstract: 30GG11 30BG11 30DG11 30FG11
Contextual Info: 9 0 9 7 2 50 T O S H I B A CDI S C R E T E i O P T O > 39C FAST RECOVERY DIODE 02244 D d W ? DE I^D-iVESG 0 DD2244 2 | Unit in ui 600V 30A 3 Q JS Î1 ,Max -f* 20- M A X IM U M RATINGS C H A R A C T E R IS T IC SY M B O L RATING 30BG11 30DG11 R epetiiïïe Peak

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

FU-29

Abstract: LA1175 L4 95 Mitsumi FM OSC LA1174 3SK181 Mitsumi AM coil ift Mitsumi D0994 IC LA1175
Contextual Info: Ordering number:EN 227 6B Monolithic Linear 1C L A 1 1 7 5, 1 1 7 5 FM F r o n t End for Ca r Ra d i o , Home St e r e o A p p l i c a t i o n s Functions . Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, differential IF amplifier, buffer amplifier for