DIODE 36A Search Results
DIODE 36A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 36A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS30R06W1E3 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+61234286544 |
Original |
fs30r06w1e3c26a232dc6a21231423567896ab+1 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS20R06W1E3 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC 'C2 36A436*61234286544 |
Original |
fs20r06w1e3c26a232dc6a2abc66+2 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3 EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+61234286544 |
Original |
fp50r06w2e3c26a2961af86-bcd66+2 | |
C532 diode
Abstract: b16/41289
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Original |
fp50r06w2e314bbfba4f32f223b+4 | |
33A zener diode
Abstract: 702 y sot 23 Z02W27V Z02W10V 682 MARKING SOT-23 z02w24v -y Zener 9v 36V zener Z02W30V Z02W33V
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Original |
z02w2ot-23z02w24vz02w33v+13 | |
Z02W16V
Abstract: Z02W27V Z02W10V 36V zener sot-23 Marking 27A E Z02W30V Z02W33V Z02W36V 702 y sot 23 z02w18v
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Original |
z02w2ot-232w18vz02w20v+12 | |
Z02W15VY
Abstract: Z02W18VY 702 y sot 23 Z02W24VY Z02W20V z02w24v -y Z02W22VX
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Original |
z02w2ot-23z02w6z02w12v+10 | |
Z02W15VY
Abstract: z02w24v -y Z02W18VY Z02W24VY Z02W15V-Y Z02W16VY marking 27A sot-23 Z02W24V-Y Z02W20VX Z02W22VY
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Original |
ot-23z02w2z02w6z02w12v+13 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ600R12KE3_B1 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode #$%&6'6# |
Original |
fz600r12ke34266c33267cc2682322642c+4 | |
ARR26C040
Abstract: ASM980-40CS
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Original |
980nmarr26c040asm980-40cs785-1064nm+2 | |
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Contextual Info: TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Built-in schottky barrier diode |
Original |
tpca8a01-h | |
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Contextual Info: MOTOROLA O rder th is docum ent by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE CATHODE H — o 1 -M - -O 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current If 200 |
OCR Scan |
bav74lt1/dbav74lt1 | |
ARR26C040
Abstract: ASM980-40CS
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Original |
980nmarr26c040asm980-40cs785-1064nm+1 | |
zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
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bzx84c-bsot-23mil-std-202ezener 6c2+9 | |
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IRF6797MTR1PBF
Abstract: IRF6797MTRPBF
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Original |
7320airf6797mpbfirf6797mtrpbfirf6797mtr1pbf | |
602d
Abstract: Q67040-A4229-A2
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Original |
o-218q67040-a4229-a2jul-31-1996602d | |
80N120Contextual Info: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode P in i Pin 2 Pin 3 G C E Type VCB h Package Ordering Code BUP 602D |
OCR Scan |
o-218abq67040-a4229-a2bup602d80n120 | |
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Contextual Info: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type VC E !c Package Ordering Code BUP 602D |
OCR Scan |
o-21867040-a4229-a2 | |
TO218AB package
Abstract: GEA15 TO-218AB Package
|
OCR Scan |
o-218abq67040-ajul-31-1996jul-31+4 | |
fast recovery diode 1200v SMD
Abstract: D18E120 diode MARKING CODE 18A 18a smd marking smd diode code 18a smd diode 36A IDP18E120 IEC61249-2-21 SMD MARKING CODE 800a smd 18A
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Original |
idp18e120pg-to220-2iec61249-2-21d18e120+7 | |
PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
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Original |
ec111ec2111v1e0804pk p6ke 200asld30-018+8 | |
IXFH36N50P
Abstract: IXFT36N50P
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Original |
ixfv36n50psixfv36n50pixfh36n50pixft36n50p+4 | |
IXGH36N60B3C1Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES |
Original |
ic110ixgh36n60b3c1100ns40khz+2 | |
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Contextual Info: VDSS ID25 IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ RDS on trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV.S) G S D (Tab) Symbol Test Conditions |
Original |
ixfv36n50psixfv36n50pixfh36n50pixft36n50p+3 | |