DIODE 352 Search Results

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

MMAD1109

Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: HL-AF-3528S9FU57GH183BC-A RED \ GREEN \ BLUE Description Features zSUITABLE FOR ALL SMT ASSEMBLY AND on GaAs substrate Light Emitting Diode. SOLDER PROCESS. ON TAPE AND REEL. The Blue source color devices are made with GaN on 2000PCS / REEL. SiC Light Emitting Diode.

A1276

Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NX5313EH

Abstract: NX5313 NX5313EK PX10160E A1276 laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

Contextual Info: DATA SHEET LASER DIODE NX7335 Series 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION DESCRIPTION The NX7335 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode

VB-2510

Abstract: s 6352 GB 2510 zener 6352
Contextual Info: Datasheet Shunt-Diode Barrier 0359 Description The SenGenuity Shunt-Diode Barrier is an intrinsically safe zener diode safety barrier which limits excessive energy into a hazardous location. The barrier is designed to be used in conjunction with a SenGenuity VC-2xxx Series Converter and SenGenuity VS-25xx Series

NX5315EH

Abstract: NX5315EH-AZ
Contextual Info: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

Contextual Info: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

Contextual Info: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V

NX5315EH

Abstract: PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

NX5311

Abstract: NX5311GH NX5311GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

BAW156LT1

Abstract: BAW156LT3
Contextual Info: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times

marking JY sot-23

Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Contextual Info: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

diode c24 06 6D

Abstract: LTC4098-3.6
Contextual Info: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Transistor motorola 418

Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

transistor IC 1557 b

Abstract: MGW20N60D motorola 803 transistor
Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

C26B

Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Contextual Info: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC