NX5315EK Search Results

NX5315EK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NX5315EK		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode	Original	PDF	91.83KB	7
NX5315EK-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications	Original	PDF	313.73KB	5

NX5315EK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A1276 Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon	PDF
NX5315 Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ Contextual Info: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ	PDF
Contextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	NX5315	PDF

Catalog Datasheet

Type

Document Tags

PDF

A1276

Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

Original

NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon

PDF

NX5315

Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
Contextual Info: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:

Original

NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ

PDF

Contextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:

Original

NX5315

PDF