DIODE 300U Search Results

BAS85

Abstract: BAT85
Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type

Contextual Info: BAT85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ‹ This diode is also available in the MiniMELF case with type

MINI-MELF DIODE green CATHODE

Abstract: DIODE WITH SOD CASE green color ring diode DIODE 436
Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. ‹ The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ‹ This diode is also available in the DO-35 case with type

BAT41

Abstract: LL41
Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

Contextual Info: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

BAT46 sod80

Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.

Contextual Info: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

Contextual Info: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMR11N DIODE SWITCHING DIODE  DESCRIPTION The UTC UMR11N is a small signal switching diode, it uses UTC’s advanced technology to provide customers with high reliability, etc. The UTC UMR11N is suitable for high frequency switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAW56W Preliminary DIODE DUAL SURFACE MOUNT SWITCHING DIODE  DESCRIPTION The UTC BAW56W is a dual surface mount switching diode providing the designers with ultra-fast switching and high conductance. The UTC BAW56W is suitable for general purpose

M02N60B

Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Contextual Info: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAW56 Preliminary DIODE DUAL SURFACE MOUNT SWITCHING DIODE  DESCRIPTION The UTC BAW56 is a dual surface mount switching diode providing the designers with ultra-fast switching and high conductance. The UTC BAW56 is suitable for general purpose switching

bat48 sod-80

Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
Contextual Info: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. „ FEATURES * Internal free-wheeling diode

TO18 Laser 808nm 300 mw

Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
Contextual Info: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

Contextual Info: U-CP-6505010 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505010 •Specifications 1 Size : (2) Device: (3) Structure 250*250*100 m Laser diode uncoating chip double channel , single ridge waveguide 100μm ■External dimensions(Unit : μm)

green color ring diode

Contextual Info: L L 41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. ‹ This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

X100M

Abstract: laser diode bare chip
Contextual Info: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm

BAS86

Abstract: green color ring diode BAT86 SCHOTTKY DIODE SOD-80 DIODE RING GREEN
Contextual Info: BAS86 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a

Contextual Info: L L 48 Small-Signal Diode - Schottky Diode Reverse Voltage 40 Volts Forward Current 350 mA Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. ‹ This device is protected by a PN junction guard ring against

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are