DIODE 300U Search Results

635-P5-C-N-RG-300-02

Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
Contextual Info: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode

BAS85

Abstract: BAT85
Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type

BAT85

Contextual Info: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type

Contextual Info: BAT85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ‹ This diode is also available in the MiniMELF case with type

MINI-MELF DIODE green CATHODE

Abstract: DIODE WITH SOD CASE green color ring diode DIODE 436
Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. ‹ The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ‹ This diode is also available in the DO-35 case with type

BAT41

Abstract: LL41
Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

Contextual Info: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

BAT46 sod80

Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.

Contextual Info: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

Contextual Info: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMR11N DIODE SWITCHING DIODE  DESCRIPTION The UTC UMR11N is a small signal switching diode, it uses UTC’s advanced technology to provide customers with high reliability, etc. The UTC UMR11N is suitable for high frequency switching

M02N60B

Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Contextual Info: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U20UC30 Preliminary DIODE 20A DIODE  DESCRIPTION The UTC U20UC30 is a 20A diode, it uses UTC’s advanced technology to provide the customers with low forward voltage drop and fast switching capability.  FEATURES * Low forward voltage drop

U-CP-80C0055-preliminary

Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Contextual Info: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.

TO18 Laser 808nm 300 mw

Abstract: IR Laser diode laser diode bare chip
Contextual Info: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

U-CP-6505001

Abstract: laser diode bare chip
Contextual Info: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAW56 Preliminary DIODE DUAL SURFACE MOUNT SWITCHING DIODE  DESCRIPTION The UTC BAW56 is a dual surface mount switching diode providing the designers with ultra-fast switching and high conductance. The UTC BAW56 is suitable for general purpose switching

bat48 sod-80

Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
Contextual Info: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

U-CP-6505011

Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Contextual Info: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

Diode BAT41

Abstract: BAT41 200MA diode SOD-80 IF1001 MINI-MELF DIODE green CATHODE
Contextual Info: L L 41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges