DIODE 2A02 Search Results

n539

Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Contextual Info: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

2A02

Abstract: ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC diode SM 78A
Contextual Info: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

diode ed 49

Abstract: DMN3025LSS
Contextual Info: Not Recommended for New Design Use DMN3025LSS ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET ID = 7.8A N O T FO R R EC N O EW M M D EN ES D IG ED N SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

2A02

Abstract: ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC
Contextual Info: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.02⍀ D=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

diode 2a02

Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

2A02

Abstract: ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC sm50A
Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN2A02N8TA

Abstract: ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV
Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

ZXMN2A02N8TA

Abstract: ZXMN2A02N8TC 2A02 TS16949 ZXMN2A02N8
Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: Signetics Advanced BiCMOS Products Objective specification Quad octal transceivers with direction pins 3-State FEATURES M B4245 QUICK REFERENCE DATA • 32-bit bidirectional bus interface • Multiple Vcc and G N D pins minimize switching noise • 3-State buffers

74LVT

Abstract: 74LVT240 74LVT240D 74LVT240DB 74LVT240PW LVT240
Contextual Info: N A P C / P H I L I P S SEfllCOND L3E P • bb5 3 T5 M 0064117 Philips Semiconductors Low Voltage Products TfiT « S I C 3 Objective specification 3.3V ABT Octal inverting buffer 3-State FEATURES • • • • • Octal bus interface 3-State buffers Output capability: +64mA/-32mA

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

MB2861

Abstract: MB2861BB
Contextual Info: b5E J> NAPC/r^ILIPS SEIHCOND • bbSBTZM OOfibblb 43E « S I C 3 Philips Semiconductors Advanced BiCMOS Products Product specification Data 1Q-bit bus transceiver 3-State MB2861 QUICK REFERENCE DATA DESCRIPTION The MB2861 bus transceiver provides high performance bus interface buffering for wide

BA-20 diode

Abstract: MB2861 MB2861BB 10nbx
Contextual Info: Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver 3-State MB2861 • Live insertion/extraction permitted • Latch-up protection exceeds 500mA per buffering for wide data/address paths or buses carrying parity

Contextual Info: Philips Semiconductors Preliminary specification 74ABT16240 74ABTH16240 16-bit inverting buffer/driver 3-State FEATURES • Latch-up protection exceeds 500mA perJEDEC Std 17 • 16-bit bus interface • ESD protection exceeds 2000V per MIL STD 883 Method 3015

74ABT16245

Abstract: MB2245DL
Contextual Info: PHILIPS INTERNATIONAL LSE D • 711Dfi2b Q057fl37 DTD ■ PHIN Philip« Semiconductors Advanced BICMOS Products Preliminary specification Dual octal transceivers with direction pins 3-State QUICK REFERENCE DATA FEATURES • 16-bit bidirectional bus interface

DC DC INPUT 3-6V OUTPUT 6V

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit inverting buffer/driver 3-State 74LVT16240A FEATURES DESCRIPTION • 16-bit bus interface The 74LVT16240A is a high-performance BiCMOS product designed for Vcc operation at 3.3V. • 3-State buffers

74LVT16240A

Abstract: 74LVT16240ADGG 74LVT16240ADL LVT16240A
Contextual Info: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V A B T 16-Bit Inverting buffers/drivers 3-State FEATURES • Live insertion/extraction permitted DESCRIPTION • Power-up 3-State The LVT16240A is a high-performance BiCMOS product designed for V c c operation

Contextual Info: P hilips Sem iconductors Product specification 16-bit buffer/driver 3-State v ' 74ABT16241A 74ABTH16241A FEATURES DESCRIPTION • 16-bit bus interface The 74ABT16241A is a high-performance BiCMOS device which combines low static and dynamic power dissipation with high speed

Contextual Info: Philips Semiconductors Product specification 16-bit inverting buffer/driver 3-State 74ABTH16240A FEATURES DESCRIPTION • 16-bit bus interface The 74ABT16240A is a high-performance BiCMOS device which combines low static and dynamic power dissipation with high speed

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit inverting buffer/driver 3-State 74LVT16240A • No bus current loading when output is tied to 5V bus • Latch-up protection exceeds 500mA per JEDEC Std 17 • ESD protection exceeds 2000V per MIL STD 883 Method 3015