DIODE 2800 Search Results

Contextual Info: SKiiP 1442 GAR 120 - 414 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

DIODE S4 65

Abstract: gal 900 DIODE S4 38
Contextual Info: SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

DS2004SF

Abstract: DS2004SF24 DS2004SF25 DS2004SF26 DS2004SF27 DS2004SF28
Contextual Info: DS2004SF DS2004SF Rectifier Diode Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 2800V ■ Freewheel Diode IF AV 2372A ■ DC Motor Control IFSM ■ Power Supplies 31250A ■ Welding

AN4839

Abstract: DS2004SF DS2004SF24 DS2004SF25 DS2004SF26 DS2004SF27 DS2004SF28
Contextual Info: DS2004SF DS2004SF Rectifier Diode Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 2800V ■ Freewheel Diode IF AV 2372A ■ DC Motor Control IFSM ■ Power Supplies 31250A ■ Welding

DS2004SF

Abstract: DS2004SF24 DS2004SF25 DS2004SF26 DS2004SF27 DS2004SF28
Contextual Info: DS2004SF DS2004SF Rectifier Diode Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 2800V ■ Freewheel Diode IF AV 2372A ■ DC Motor Control IFSM ■ Power Supplies 31250A ■ Welding

Contextual Info: DS2004SF DS2004SF Rectifier Diode Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 2800V ■ Freewheel Diode IF AV 2372A ■ DC Motor Control IFSM ■ Power Supplies 31250A ■ Welding

APT30DQ120BCT

Abstract: APT30DQ120BCTG 30A 1200V Diode APT TO-247
Contextual Info: 1200V 30A APT30DQ120BCT APT30DQ120BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

APT30DQ120K

Abstract: APT30DQ120KG
Contextual Info: 1200V 30A APT30DQ120K APT30DQ120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: 2700 nm Laser Diode SAR-2700-10 Description The SAR-2700-10 is a high power broad area laser diode intended for midinfrared applications including spectroscopy and solid-state laser pumping. Absolute maximum ratings Parameter Operating temperature Laser diode

diode 5082-2800

Abstract: 50822800
Contextual Info: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS

diode 5082-2800

Abstract: diode 5082-2800 datasheet UHF/VHF
Contextual Info: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS

diode hp 2835 schottky

Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

5082-2835 diode

Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

Contextual Info: @ MITEL DS2004SF Rectifier Diode S E M IC O N D U C T O R Supersedes Novem ber 1997 version, DS4188 - 3.0 DS4188 - 3.1 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 2800V IF av,

MVAM125

Abstract: MVAM-1
Contextual Info: MVAM125 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM125 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 28 V PDISS 2800 mW @ TC = 25 C TJ -55 C to +125 C

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D1331SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 1310 A TC=85 °C IFSM VT0 28000 A 3570A (TC=55°C) 2,13 V rT 0,948 mΩ RthJC 7,5 K/kW Clamping Force 36 … 52 kN

Analog devices assembly code marking Information

Abstract: marking 52 sot363 MARKING CODE 52 sot363 diode SOT-143 Marking Code A5 sot143 marking code A3 marking A5 sot363 marking code E5 sot23 6 pin marking code e5 sot363 Analog devices code marking AB marking code a5 sot363
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2800 HSMS-2800 Low reverse leakage Schottky diode Description Lifecycle status: Active Features General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like

5SLD 1200J450350

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1436-00 10-2013 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

iec 61287

Abstract: 1200J450350 5SLD1200J450350
Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode  Smooth switching SPT diode for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling

5SLG 0600P450300

Contextual Info: Data Sheet, Doc. No. 5SYA 1436-01 01-2014 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLD 1200J330100

Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode • Smooth switching SPT diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power