DIODE 25A 800V Search Results

Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

BYP54-800

Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

035H

Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

IRGP30B120KD-EP

Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

I.C LA 3778

Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability

motor IG 2200 19 x 00 15 r

Abstract: 12v dc motor IG 2200 19
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

HGT1S5N120CNDS

Abstract: HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120

Abstract: 5N120CND 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 5N120CN
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

SIDC23D120F

Contextual Info: Preliminary SIDC23D120F Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC23D120F 1200V ICn 25A A This chip is used for:

sine wave power inverter schematic

Abstract: "Power Diode" 25A 800V 7MBR25SA-140
Contextual Info: 7MBR25SA140 IGBT Modules IGBT MODULE S series 1400V / 25A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

Contextual Info: APT25GR120B_SDU15 APT25GR120BDU15 APT25GR120SDU15 1200V, 25A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode (B) The Ultra Fast 1200V NPT-IGBT family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

2501G

Contextual Info: DACO SEMICONDUCTOR CO., LTD. AR S 2501G THRU AR(S)2507G AUTOMOTIVE GLASS PASSIVATED RECTIFIERS TYPE 25A Features 25Amp BUTTON DIODE 50-1000 Volts High Surge Capability High Current Capability Types up to 1000V V RRM BUTTON-AR Maximum Ratings D Operating Temperature: -50 to +215

Contextual Info: DACO SEMICONDUCTOR CO., LTD. AR S 2501 THRU AR(S)2507 AUTOMOTIVE SILICON RECTIFIERS TYPE 25A Features 25Amp BUTTON DIODE 50-1000 Volts High Surge Capability High Current Capability Types up to 1000V V RRM Silicon junction BUTTON-AR Maximum Ratings D Operating Temperature: -50 to +190

VM48

Abstract: VM18 VM28 VM68 VM08 VM108 VM25 VM88
Contextual Info: 1 AMP DUAL IN-LINE BRIDGE Glass-passivated diode chips Standard .10" grid DIP lead spacing 2 DIB’s will fit in standard 14 pin DIP socket 25V, 50V, 100V, 200V, 400V, 600V, 800V & 1000V V 25A peak one-half cycle surge current A B C D E F G H 1 J K L M

s25vb 40 Bridge Diode

Contextual Info: SQ I P Bridge Diode Square In-line Package OUTLINE S25VB 11 S25VB ＋ ① ② 32 IR ④ Feature • • • • 23 32 High-Reliability Heat Resistance Low IR Faston terminal 60 16 800V 25A • • • • Unit : mm Weight : 21g typ. Package S25VB ロット記号（例）

Contextual Info: Bridge Diode Single In-line Package OUTLINE D25XB Unit : mm Weight : 7.1g typ. Package 5S 800V 25A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 • IFSM • • ロット記号（例） 4.6 Date code 30 D25XB 60 0264 20 ＋ ①

S25VB

Abstract: S25VB60 S25VB80
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S25VB□ Unit : mm Weight : 21g （typ.） Package：S25VB 800V 25A 23 32 60 16 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR • ファストン端子 32 ④ Feature •

Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S25VB□ Unit : mm Weight : 21g （typ.） Package：S25VB 800V 25A 23 32 60 16 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR • ファストン端子 32 ④ Feature •

Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D25XB□ Unit : mm Weight : 7.1g （typ.） Package：5S 800V 25A 管理番号（例） Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422