DIODE 1NU Search Results

Contextual Info: LOW LOSS DIODE SPECIFICATION 1 . Absolute Maximum Ratings Iten Storage temperature Operating junction temperature Peak reverse voltage Average rectified forward current Peak surge forward current Dielectric Strength Mounting Torqe T c = 2 5*C Symbol T .ti

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sony cxd 1125

Contextual Info: SONY ICX057AL 1/4-inch CCD Image Sensor for CCIR Black-and-white Video Cameras Description The ICX057AL is an interline CCD solid-state image sensor suitable for CCIR black-and-white video cameras. High sensitivity is achieved through the adoption of HAD Hole-Accumulation Diode sensors.

INI615

Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
Contextual Info: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R

1N1149

Abstract: AS4A 1N1147
Contextual Info: MIL SPECS I OODDiaS 7 | INCH-POUND NOTICE OF VALIDATION MIL-S-19500/254A ER NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N1147 AND 1N1149 Military specification MIL-S-19500/254A(EL), dated 6 February 1968 has been reviewed and determined to be valid for use in

Contextual Info: SONY ICX062AL 2/3-inch CCD Image Sensor for EIA B/W Video Camera Description The ICX062AL is an interline CCD solid-state image sensor suitable for EIA black-and-white video cameras with a 2/3-inch optical system. High sensitivity is achieved by adopting HAD HoleAccumulation Diode sensors. The chip features a

Contextual Info: TENTATIVE DATA I2BK6,26BK6 6BK6 TUNG'SOL DOUBLE-DIODE TRIODE MINIATURE TYPE î - 4 - MAX COATED ^=5 UNIPOTENTIAL CATHODE HEATER 6 .3 T-5i o VO LTS 3 0 0 MA. AC OR DC 5‘ 2 T ANY MOUNTING P O S I T I O N BOTTOM VIEW GLASS BULB THE 6BK6 M INIATURE BUTTON 7 PIN

1N135

Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Contextual Info: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M

SDF9130

Contextual Info: PRODUCT Æ iitxan C Â T Â l ' DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. 0.3Q SD F 9 1 3 0 SD F 9 1 3 0 JAA JAB FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS

1D11A

Abstract: SDF11N100
Contextual Info: PRODUCT Æ iitron CÂTÂIO ' N-CHANNEL ENHANCEMENT MOS FET 1000V, 11A , 1.15 n SDF11N100 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

je5740

Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#f*rr#d Dovte* The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications

diode 1NU

Abstract: 2SK1115 diode 1NU 0 b
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- 7r-MOSm 2SK1115 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER,RELAY DRIVE AND HOTOR DRIVE APPLICATIONS. Unit in mm 3.6±0.2 10.3MAX. 3L1 FEATURES: • 4-Volt Gate Drive

HA17805P

Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
Contextual Info: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Contextual Info: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure

2SJ312

Contextual Info: T O S H IB A 2SJ312 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL 10.3MAX.

TTC 103 thermistor

Abstract: XTR100AP XTR100 XTR100AM RTD signal conditioning theory Cold Junction Compensation Temecula I09fi 400X1
Contextual Info: X T R 100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSM ITTER FEA T U R ES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL

TTC 103 thermistor

Abstract: XTR100AP thermistor ttc 103 XTR100 zero elevation sand zero suppression level 467C zero elevation and zero suppression SL010
Contextual Info: XTR100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSMITTER FEATURES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL

MIP0224SY

Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Contextual Info: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

Contextual Info: 10A LDO 3-Pin Adjustable Linear Regulator Description The CS5210-1 linear regulator pro­ vides 10A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and provide the minimum load current

74LS259N

Contextual Info: TO SH IB A TC74HC259AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC259AP, TC74HC259AF, TC74HC259AFN 8 -BIT Note The JED EC SOP (FN) is not available in Japan. ADDRESSABLE LATCH The TC74HC259A is a high speed CMOS ADDRESSABLE LATCH fabricated with silicon gate C2MOS technology.

16-Bit LED Driver with Shift Register and Latch

Abstract: M66310FP M66310P
Contextual Info: M ITSUBISHI <DIGITAL ASSP> M66310P/FP 16-B IT LED DRIVER W ITH S H IF T REG ISTER AND LATCH DESCRIPTION M 6 6 3 1 0 P /F P is a LE D array driver having a 16bit serial- PIN CONFIGURATION TOP VIEW input and p a ra llel output shiftregister function with direct

S202TA1

Abstract: AC200V LR63705 triac varistor S4.3 ir led
Contextual Info: PREPARED BY: DATE: V APPROVED BY: & , 9<m£AUL !ìù i ED-94045D SHARP 9^ DATE: ELECTRONIC COMPONENTS. GROUP SHARP CORPORATIONX\ &&. ±7. ECTRONIC ;S DIV. SPECIFICATION DEVICE SPECIFICATION FOR SOLID STATE RELAY MODEL No. S202TA1 1. These specification sh eets include the contents under the copyright of Sharp Corporation ("Sharp" .