DIODE 1N914B Search Results

1N4148WT

Abstract: 1N4148WT RoHS 1N914BWT 1N4448WT 914W
Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

diode 1n914

Abstract: NX DIODE 1N914B 1N914 1N914A jedec do 35
Contextual Info: Switching Diode 1N914/1N914A/1N914B Switching Diode Features • • • • Fast switching speed Electrically indentical to standard JEDEC High Conductance Axial lead package ideally suited for automatic insertion DO-35 Mechanical Data • • • • •

1N9148

Abstract: S3 marking DIODE marking code s1 SMD diode SOD-323F D10 SMD CODE MARKING smd diode S2 smd diode sod-323 marking code 500 1N4148WS Marking Code s3 diode smd diode code s3
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

S3 marking diode

Abstract: SOD 323 diode 830 mm sod code marking code s1 SMD diode
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323 B Features A C —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Q265

Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
Contextual Info: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES

Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N4148 Fast Switching Diode

Abstract: free 1N4148 1N4148 DO35 1n4148 w1 f12 diode
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N4148, SOD-27

Abstract: 1n914B free 1N4148 1N4148 sod27 1N4148
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N9148

Abstract: 1N9148B MARKING CODE diode sod123 W1 1N4148W SOD123 D3 w1 marking SOD 123 1N4148W/1N4448W/1N914BW
Contextual Info: 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123 B Features C A —Fast switching device T rr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

diode 1N914B

Abstract: 1N914B
Contextual Info: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2

1nxxxx diode

Abstract: 1N4148 SIGNAL DIODE 1n4448 diode 1N4148.1N4448 SOD-27 1N4148 1N4448 1N914B 1N4148 diode SOD 80 1NXXXX
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N4148 diode SOD 80

Abstract: free 1N4148 1N4448 1N914B 1N4148.1N4448 1N4148 diode 1N4448 1N4148 CJ
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C ­Fast switching device Trr<4.0nS ­Through-hole device type mounting A ­Moisture sensitivity level 1 ­Solder hot dip Tin(Sn) lead finish

1N914B

Contextual Info: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).

1N9148

Abstract: 1N9148B D1 SMD CODE MARKING w1 marking SOD 123 D10 SMD CODE MARKING SMD MARKING CODE D1 SOD123F JEDEC diode sod-123 marking code 120 SOD-123 JEDEC 1N9148B Datasheet
Contextual Info: 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123F B Features C A —Fast switching device T rr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

diode cross reference 1n914

Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

SC4075

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

Contextual Info: 1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: TA = +25C, Note 1 unless otherwise specified Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

1N4148 chip

Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

diode S 335

Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

1n4148

Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
Contextual Info: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

CMPD2836

Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

1n4148 die chip

Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
Contextual Info: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization