DIODE 1N4396 Search Results

1N4396

Abstract: diode 1n4396
Contextual Info: 1N4386 SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO- 4 The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS If 200 mA Vr 250 V Pd is s 20 W @ Te = 25 °C Tj -65 0C to +150 0C Ts t g -65 0C to +175 0C 0 jc 5.0 0C/W

1N4396

Abstract: 1N4386 varactor multiplier diode 1n4396
Contextual Info: 1N4386 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IF 200 mA VR 250 V PDISS 20 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 5.0 C/W O O O O O

Contextual Info: 1N4396B Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 100u Peak Curr. Tol.2.0u Total Cap. (F)150p Ip/Iv Min Vp70m Vv500m Fwd Volt @Ipeak1.0 Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialSilicon

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4