DIODE 1BL Search Results

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

SO16 weight

Contextual Info: I V PR O IEK D E V IC E S <§ TVS Low Capacitance Surface M o un t □ ¡ode A rra v Engineered solutions fo r the transient environment S M 1BLC Series DESCRIPTION . IEC 801 Compatible •Ah j This Bidirectional Diode Array TVS family is a series of low capacitance silicon transient suppressors

transistor SMD LOA

Abstract: 9915 transistor TD13005D 1b.1 smd transistor ir 9911
Contextual Info: Temic Semiconductors TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation

1bl3

Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
Contextual Info: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1BL3 marking code

Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1bl3 motorola

Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS130LT3

Abstract: 403A-03
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1BL

Abstract: U17E
Contextual Info: •I Bi CONTROLLED AVALANCHE DIODE U17 Unit in mm inch ■4$ « ■FEATURES • T ra n sie n t surge voltag e protection. • Diffused-junction. G lass passivated encapsulated. and ■ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power

Buf725d

Abstract: transistor BUF725D
Contextual Info: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate

403A-03

Abstract: diode 1bl3 1BL3 1bl3 motorola
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with

sl5501

Contextual Info: Optoisolator Specifications SL5500, SL5501 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5500-SL5501 c o n sis ts o f a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a l in -lin e p a ck a g e .

1h31

Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
Contextual Info: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Kenwood

Abstract: delta sigma modulation and demodulation Delta ac servo motor TDA7522 TDA7473 TQFP80 512x16Bit TDA7521 56MIPS adaptive delta demodulator
Contextual Info: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: – 24 KByte ROM available for ST7 & Servo-Audio DSP – 1024Byte RAM, including 128byte stack – 4KByte RAM for CD-Text memory (for 1block) – Built in R-W subcode buffer (Max. 144Byte

TDA7522

Abstract: delta sigma modulation and demodulation 50MIPS TDA7521 laser disk spindle motor controller Register TQFP80 STMicroelectronics marking ROM code name c program to interface imu to microcontroller kenwood equalizer crossover
Contextual Info: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: – 24 KByte ROM available for ST7 & Servo-Audio DSP – 1024Byte RAM, including 128byte stack – 4KByte RAM for CD-Text memory (for 1block) – Built in R-W subcode buffer (Max. 144Byte

Contextual Info: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: - 24 KByte ROM available for ST7 & Servo-Audio DSP - 1024Byte RAM, including 128byte stack - 4KByte RAM for CD-Text memory (for 1block) - Built in R-W subcode buffer (Max. 144Byte

MG25N2YS1

Abstract: mg25n2
Contextual Info: TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA D IS C R E T E / O P T O TO SH IBA P E I ‘ìCHTgSO 0 0 1blfc,5 D I 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.