DIODE 17 CA Search Results

diode avalanche DSA 25 8

Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM DSI 17 DSAI 17 Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A on stud DSI 17-08A DSI 17-12A on stud 1300 1700 1900 1300

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

Q62702-A777

Contextual Info: SIEM ENS Silicon Schottky Diode BAT 17. • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package Q62702-A504 Q62702-A775 Q62702-A776

DSS17-06CR

Abstract: 17-06CR
Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol

Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V = 45 ns trr Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol

Contextual Info: SIEMENS B AT 17. Silicon Schottky Diode • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code Pin Configuration Marking tape, and reel 1 2 3 Q62702-A504 Q62702-A775 Q62702-A776

BAP50LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance

A777

Abstract: sot-23 a777 Q62702-A776 DIODE BAT sot-23 marking code Q62702-A504 Q62702-A775 Q62702-A777 MARKING 54 "Pin Diode"
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

DIODE BAT 17

Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings

Contextual Info: BAT 17 . 3 Silicon Schottky Diode
For mixer applications in VHF/UHF range
For high-speed switching application BAT 17 BAT 17-04 1 3 2 BAT 17-05 1 3 3 VPS05161 EHA07002 1 2 1 2 BAT 17-06 EHA07004 EHA07005 3 1 2 EHA07006 Type Marking Pin Configuration

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

top marking c2 sot23

Abstract: Diode SOT-23 marking C2
Contextual Info: BAT 17 . Silicon Schottky Diode 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17 BAT 17-05 BAT 17-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 17-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration

"MARKING code PC"

Abstract: BB153 st smd diode marking code BP317 smd diode 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB153 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB153 FEATURES DESCRIPTION

smd code marking 777

Abstract: st smd diode marking code BB164 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

C75V

Abstract: "marking CODE 13" C7.5 MARKING C75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BB207 FM variable capacitance double diode Preliminary specification 2003 Nov 17 Philips Semiconductors Preliminary specification FM variable capacitance double diode BB207 PINNING FEATURES • Excellent linearity

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BB153 VHF variable capacitance diode Product specification Supersedes data of 1997 Dec 17 2004 Feb 25 Philips Semiconductors Product specification VHF variable capacitance diode BB153 FEATURES PINNING • Excellent linearity

automotive ignition

Abstract: CAR IGNITION Electronic car ignition circuit
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION