DIODE 17 CA Search Results

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

BAP50LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance

Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

diode 1700v

Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

ixgh 1500

Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

17n100a

Abstract: NC2030 17N100AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

SMD MARKING CODE s4

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

DIODE marking S4 06

Abstract: BAP1321-04
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

Contextual Info: DSS17-06CR V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 600 V 17 A 2.71 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

1a0 diode

Abstract: MICROCIRCUIT SO 1A0 TEMPERATURE COMPENSATED SMD DIODE LM113-2H-SMD LM113 LM113-2H-QMLV
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLM113-2-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features

Contextual Info: 1.29 ÷ 1.33 !m CW output power > 2.0 mW LFO-17-i Description: LFO-17-i – is a series of optical modules based on Mitsubishi 1310nm MQW InGaAsP/InP Fabry-Perot laser diode and coupled with multimode optical fiber. Hermetically sealed modules are performed in standard «DIL-14»

Contextual Info: ISL9K460P3 8 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9K460P3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

smd diode schottky code marking A4

Abstract: MARKING CODE SMD diode A4 sod323 diode bat760 sod323 wave soldering
Contextual Info: BAT760 Medium power Schottky barrier single diode Rev. 03 — 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323 SC-76 very small Surface-Mounted

Contextual Info: ISL9R460PF2 4 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9R460PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and

Contextual Info: 1.29 ÷ 1.33 Om CW output power > 2.0 mW LFO-17-ip Description: LFO-17-ip – is a series of optical modules based on Mitsubishi 1310nm MQW InGaAsP/InP Fabry-Perot laser diode and coupled with multimode optical fiber. Hermetically sealed modules are performed in standard coaxial package with built-in InGaAs monitor photodiode and collimating ball lens.

SE2470

Abstract: SD2410 SD2420 SD2440
Contextual Info: 17 September 1997 SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ nominal beam angle • Wide operating temperature range (-55¡C to +125¡C) • Higher power output than GaAs at equivalent

VSSX1284

Contextual Info: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • Lead Pb -Free available Product is pictured larger than actual size to show detail • Standard QSOP package (28 pins) - JEDEC mo-137AF • 17 terminating lines

HL6714G

Abstract: ODE-208-044
Contextual Info: HL6714G ODE-208-044 Z Rev.0 Oct. 17, 2006 AlGaInP Laser Diode Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic

Diode BAY 21

Abstract: Diode BAY 46 ir 0588
Contextual Info: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode

infrared diode

Abstract: Infrared Emitting Diode SD3443 SD5443 SD5600 SE3470 SE5470 5443 equivalent
Contextual Info: 17 September 1997 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent

infrared diode

Abstract: SE3455 SD3443 SD5443 SD5600 SE5455
Contextual Info: 17 September 1997 SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: 17 September 1997 SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)