DIODE 17 CA Search Results

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

Q62702-A777

Contextual Info: SIEM ENS Silicon Schottky Diode BAT 17. • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package Q62702-A504 Q62702-A775 Q62702-A776

DSS17-06CR

Abstract: 17-06CR
Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol

Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V = 45 ns trr Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol

BAP50LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance

A777

Abstract: sot-23 a777 Q62702-A776 DIODE BAT sot-23 marking code Q62702-A504 Q62702-A775 Q62702-A777 MARKING 54 "Pin Diode"
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

DIODE BAT 17

Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

DSS17-06CR

Abstract: dss17-06 DC3010
Contextual Info: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings

top marking c2 sot23

Abstract: Diode SOT-23 marking C2
Contextual Info: BAT 17 . Silicon Schottky Diode 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17 BAT 17-05 BAT 17-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 17-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BB153 VHF variable capacitance diode Product specification Supersedes data of 1997 Dec 17 2004 Feb 25 Philips Semiconductors Product specification VHF variable capacitance diode BB153 FEATURES PINNING • Excellent linearity

automotive ignition

Abstract: CAR IGNITION Electronic car ignition circuit
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION

Electronic car ignition circuit

Abstract: automotive ignition CAR IGNITION
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX132GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPL FEATURES DESCRIPTION

Electronic car ignition circuit

Abstract: car electronic ignition automotive ignition CAR IGNITION sod125 HIGH ENERGY IGNITION CIRCUIT ignition system BYX133GPL SCA73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION

diode Cathode indicated by blue band

Abstract: automotive ignition Electronic car ignition circuit
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION

BGF120

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel Ultra-Low Capacitance ESD Diode Datasheet Rev. 1.4, 2012-09-17 Final Power Management & Multimarket Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

Contextual Info: PESD5V0V1BSF Ultra low profile bidirectional very low capacitance ESD protection diode Rev. 2 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge ESD protection diode in

BB156

Abstract: nxp Standard Marking marking nxp package SC-76 NXP RF Marking Code vco nxp
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BB156 Low-voltage variable capacitance diode Product specification Supersedes data of 1998 Aug 17 2004 Mar 01 NXP Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB156 PINNING • Excellent linearity

ESD101-B1-02ELS

Abstract: ESD101-B1-02EL
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD101-B1-02series Bi-directional Ultra Low Capacitance TVS Diode ESD101-B1-02ELS ESD101-B1-02EL Data Sheet Revision 1.0, 2013-04-17 Final Power Management & Multimarket Edition 2013-04-17 Published by Infineon Technologies AG

DIODE smd marking pl

Abstract: BB149A M3D049 st smd diode marking code BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB149A UHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification UHF variable capacitance diode BB149A FEATURES DESCRIPTION • Excellent linearity The BB149A is a planar technology