DIODE 1205 Search Results

NXP date code marking

Contextual Info: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  Low diode capacitance  Low diode forward resistance

thyristor control arc welding rectifier circuit

Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150

Contextual Info: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode

DS501ST

Abstract: DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06
Contextual Info: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode

DS501ST

Abstract: DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06
Contextual Info: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode

AN4839

Abstract: DS501ST DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06 A596A XT-2350
Contextual Info: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled

diode NXP marking code N1

Abstract: SOD882D
Contextual Info: 006 D-2 BB173LX DF N1 VHF variable capacitance diode Rev. 1 — 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB173LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

diode NXP marking code N1

Contextual Info: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt BUP306D
Contextual Info: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

marking nxp package

Abstract: NXP SMD diode MARKING CODE
Contextual Info: 006 D-2 BAP51LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

Contextual Info: 006 D-2 BAP55LX DF N1 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

DFN1006D-2

Abstract: diode marking code cz
Contextual Info: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

NXP date code marking

Abstract: marking nxp package SOD882D a/BAP1321LX
Contextual Info: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled

Contextual Info: 006 D-2 BAP142LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor

NXP date code marking

Abstract: marking nxp package nxp marking code
Contextual Info: 006 D-2 BAP63LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

Contextual Info: 006 D-2 PESD5V0F1BRLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

Contextual Info: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

DIODE T50

Abstract: MMBD7000 mmbd1201 MA670
Contextual Info: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units