DIODE 12 KV Search Results

3.2 v zener diode

Abstract: 105um DIODE ZENER X
Contextual Info: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode

keyboard and touchpad schematic

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.0, 2013-04-12 Final Power Management & Multimarket Edition 2013-04-12 Published by Infineon Technologies AG

Contextual Info: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features

hvca CL03-12

Contextual Info: HVCA CL03-12 12kV 250mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

PESD5V0S1BSF

Contextual Info: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a

aurix

Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by

nxp marking code

Abstract: BIDIRECTIONAL DIODE marking nxp package
Contextual Info: PESD5V0S1BLD Low capacitance bidirectional ESD protection diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients.

HIGH VOLTAGE DIODE 12kv

Abstract: flyback transformer FBT 18 crt flyback transformer high voltage CRT transformer 1-2kv flyback transformer FBT 90 12KV fbt 110 12KV 2ma high voltage diode 100 kv
Contextual Info: ESJA09-12 12kV/5mA Outline Drawings : mm HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 10 27 min.

ESJA08

Contextual Info: HVCA ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5

Contextual Info: HVGT ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5

chopper transformer

Abstract: transistor BC 109 Data SKIIP DRIVER GD
Contextual Info: SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM

452 diode

Contextual Info: SKiiP 262 GDL 060 - 452 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM

Marking AE

Contextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V e3 • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package

Contextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V • ESD-immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package

B6U 205

Abstract: b6 diode B6U205 S208A
Contextual Info: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 205 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM

B6U 205

Abstract: A1375 0kv3
Contextual Info: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 205 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM

170KW

Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA

marking code e3

Abstract: Transient Voltage Suppressors
Contextual Info: SESD12 VOLTAGE: 12 V Elektronische Bauelemente 110 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOD-723 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.

SM712

Abstract: TVS SOT23 712 CDSOT23-SM712 S0T23
Contextual Info: NT IA PL M CO S • ■ *R oH Features ■ ■ Applications RoHS Compliant* Working peak reverse voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ Wireless systems Network protection Portable electronics CDSOT23-SM712 – Surface Mount TVS Diode

Contextual Info: GMF05C Vishay Semiconductors ESD Protection Diode Array Features • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV (contact) IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics

VC2023

Contextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm

Contextual Info: NT IA PL M CO S • ■ *R oH Features ■ ■ Applications RoHS Compliant* Working peak reverse voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ Wireless systems Network protection Portable electronics CDSOT23-SM712 – Surface Mount TVS Diode

GMF05C

Abstract: GMF05C-GS08
Contextual Info: GMF05C VISHAY Vishay Semiconductors ESD Protection Diode Array Features • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV (contact) IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHW9227 Rev. 0, 12/2002 MHW9227 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection