DIODE 12 KV Search Results
DIODE 12 KV Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 12 KV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3.2 v zener diode
Abstract: 105um DIODE ZENER X
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wt-z106p-4-12150mm05-dec-063.2 v zener diode+2 | |
keyboard and touchpad schematicContextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.0, 2013-04-12 Final Power Management & Multimarket Edition 2013-04-12 Published by Infineon Technologies AG |
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esd206-b1-02vsc79-fpsc79-tpan210+1 | |
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Contextual Info: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features |
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hv37-12300mado-415 | |
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Contextual Info: HVCA HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features |
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hv37-12300ma | |
hvca CL03-12Contextual Info: HVCA CL03-12 12kV 250mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features |
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cl03-12250mahvca cl03-12 | |
PESD5V0S1BSFContextual Info: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a |
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od962pesd5v0s1bsf | |
aurix
Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
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esd3v3u1u-02lsesd3v3u1u-02lrhan210an140+5 | |
skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
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skiip 613 gbsemikron skiip 613skiip 513 gbsemikron b6u 690 930+6 | |
nxp marking code
Abstract: BIDIRECTIONAL DIODE marking nxp package
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od882daec-q10161000-4itionsnxp marking code+2 | |
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Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor |
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WJ 176
Abstract: G003 G008 G010 90 NF block diagram 74HCXX IC
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wj 176g003g008g010+2 | |
HIGH VOLTAGE DIODE 12kv
Abstract: flyback transformer FBT 18 crt flyback transformer high voltage CRT transformer 1-2kv flyback transformer FBT 90 12KV fbt 110 12KV 2ma high voltage diode 100 kv
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esja09-1212kv/5maesja09high voltage diode 12kv+9 | |
ESJA08Contextual Info: HVCA ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5 |
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esja08-12esja08-esja08 | |
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Contextual Info: HVGT ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5 |
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esja08-12do-206 | |
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chopper transformer
Abstract: transistor BC 109 Data SKIIP DRIVER GD
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chopper transformertransistor bc 109 dataskiip driver gd | |
452 diodeContextual Info: SKiiP 262 GDL 060 - 452 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM |
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262gd060452 diode | |
Marking AEContextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V e3 • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package |
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vesd12a1c-02zod9232002/95/ec2002/96/ec+3 | |
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Contextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V • ESD-immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package |
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vesd12a1c-02zod9232002/95/ec2002/96/ec+2 | |
marking AEContextual Info: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • Reverse working range = 12 V e3 • ESD-Immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package |
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vesd12a1c-02zod9232002/95/ec2002/96/ec+3 | |
B6U 145 n
Abstract: B6U 145 B6U145N B6U 220
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45l/s90l/sb6u 145 nb6u 145+2 | |
KM-17
Abstract: heatsink KM 60 B6U 145
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45l/s90l/skm-17heatsink km 60+1 | |
B6U 205
Abstract: b6 diode B6U205 S208A
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b6u 205b6 diodeb6u205s208a | |
diode torque values
Abstract: S104A
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diode torque valuess104a | |
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Contextual Info: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 215 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM |
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