DIODE 12 B2 Search Results

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

skiip 613 gb

Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Contextual Info: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor

Contextual Info: SKCD 61 C 170 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, #453 6 #48, Values Units &- / 0 12 #+ /  3 & /  12 &- 7 / 0 12 &- / 0 12         0

850 PIN Photodetector

Abstract: photodetector 850 nm NDL2104
Contextual Info: b2E D N E C • b42?SES DD37443 3=12 ■ N E C E PHOTO DIODE ELECTRONICS INC NDL2104 OPTICAL FIBER C O M M U N IC A T IO N S SILICON PIN PHOTO DIODE DESCRIPTION NDL2104, is an epitaxial PIN photodiode detectors w ith excellent quantum efficiency, switching speed, and spectral range.

Contextual Info: SKCD 47 C 170 ISEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "4536 "49, Values Units %- / 0 12 "+ /  3 % /  12 %- 7 / 0 12 %- / 0 12         8 

Contextual Info: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

DSEP15

Contextual Info: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

Contextual Info: DSEP12-12A HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

MADL-011023-14150T

Contextual Info: MADP-011029-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V2 Features • • • • • • • • Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss

Contextual Info: SKCD 61 C 170 I HD Absolute Maximum Ratings Symbol Conditions +, #453 6 #48, Values Units & - / 0 12 # + /  3 & /  12 &- 7 / 0 12 & - / 0 12         0 )0 3 3 &- 7 / 0 12          3 9 0 12 &- 7 SEMICELL CAL-DIODE

diode b27

Abstract: sknd 40
Contextual Info: VRSM IFRMS maximum value for continuous operation VRRM 120 A SEMIPACK 1 Fast Diode Modules IFAV (sin. 180; Tcase = 85 °C; 50 Hz) V 42 A 1000 SKKD 42 F 10 SKMD 42 F 10 – 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12 1400 SKKD 42 F 14 SKKD 42 F 14 SKND 42 F 14

Contextual Info: SKCD 47 C 170 I Absolute Maximum Ratings Symbol Conditions +, "4536 "49, Values Units % - / 0 12 " + /  3 % /  12 %- 7 / 0 12 % - / 0 12         8    3 3 %- 7 / 0 12        00 3 : 0 12 %- 7 SEMICELL CAL-DIODE

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

LQA12T300C

Contextual Info: LQA12T300C, LQA12B300C Qspeed Family 300 V, 12 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 300 27 1.87 0.7 General Description A V nC A Pin Assignment

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

SKKT 41/12 E

Abstract: semikron skkt semikron thyristor skkt 800 skkt 40 12 semikron skkh 41/14 semipack skkt semikron skkt 41/08D semipack skkt 40 skkl 42/12 E skkt 41/14e
Contextual Info: VRSM VRRM dv/ VDRM dt cr V V SEMIPACK 1 Thyristor/ Diode Modules ITRMS (maximum value for continuous operation) 75 A ITAV (sin. 180; Tcase = 68 °C) 48 A V/µs 500 400 500 700 600 500 SKKT 41/06 D SKKT 42/06 D 900 800 1300 1200 1300 1200 1000 SKKT 41/12 E SKKT 42/12 E1) SKKH 41/12 E

STTH506DTI

Contextual Info: STTH506DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS 1 IF AV 5A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 3.6 A trr (typ.) 12 ns 2 2 1 Insulated TO-220AC FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM