DIODE 100V 80 A Search Results
DIODE 100V 80 A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
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Zener Diode, 16 V, USC | Datasheet |
DIODE 100V 80 A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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minimelf diodes color
Abstract: cdsu4148 CDSN4148 CDSS4148 minimelf SOD80
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LL4148-G OD-80) CDSU4148, CDSS4148 CDSN4148 100MHz, MDS0209003A minimelf diodes color cdsu4148 CDSN4148 minimelf SOD80 | |
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Contextual Info: APTM20HM08F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 8mΩ Ω max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • • |
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APTM20HM08F 50/60Hz APTM20HM08F | |
SYLGARD
Abstract: SYLGARD 539 MA47416-132 MA4P202-134
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200oC, SYLGARD SYLGARD 539 MA47416-132 MA4P202-134 | |
330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
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FLLD258 FLLD261 FLLD263 400mA -200mA 330 marking diode FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63 | |
MIC2176
Abstract: Zener Diode SOD323 npn TRANSISTOR SOT89 CRCW06030000FKEA NPN Transistor 10A 24V GRM32ER61C476ME15 BAT46W DIODE 100V CDEP147NP-4R7MC-95 EEUF2A101 CDEP147NP-100MC-95
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MIC2176 MIC2176-1/-2/-3 100kHz, 200kHz, 300kHz. MIC2176-2, 200kHz M9999-052411-C Zener Diode SOD323 npn TRANSISTOR SOT89 CRCW06030000FKEA NPN Transistor 10A 24V GRM32ER61C476ME15 BAT46W DIODE 100V CDEP147NP-4R7MC-95 EEUF2A101 CDEP147NP-100MC-95 | |
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Contextual Info: POWER OPERATIONAL AMPLIFIERS PA08 • PA08A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ±150mA |
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PA08A 546-APEX 150mA PA08MU | |
N mosfet 100v 200A
Abstract: 100V N-channel mosfet FQH90N10V2
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FQH90N10V2 FQH90N10V2 N mosfet 100v 200A 100V N-channel mosfet | |
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Contextual Info: QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB34P10TM -100V, | |
3 phase inverter ic ir2136
Abstract: diagram for test ic 8873 4583 schmitt trigger IRAM136-3023B IR2136 application note ic 4026 DN 98-2a, application note AN-1044 IR2136 3023B data 8873
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PD-97270 IRAM136-3023B IRAM136-3023B AN-1049 3 phase inverter ic ir2136 diagram for test ic 8873 4583 schmitt trigger IR2136 application note ic 4026 DN 98-2a, application note AN-1044 IR2136 3023B data 8873 | |
IXTH140P10T
Abstract: IXTT140P10T
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IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T | |
FQB34P10TM_F085Contextual Info: QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB34P10TM -100V, FQB34P10TM_F085 | |
IRFU4620
Abstract: IRFR4620TRPBF jedec package TO-252AA
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-96207A IRFR4620PbF IRFU4620PbF Curr75 AN-994. IRFU4620 IRFR4620TRPBF jedec package TO-252AA | |
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Contextual Info: APTM20AM06S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mΩ Ω max @ Tj = 25°C ID = 300A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • • |
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APTM20AM06S 50/60Hz | |
N mosfet 100v 200A
Abstract: FQA90N10V2 100V N-Channel MOSFET
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FQA90N10V2 FQA90N10V2 N mosfet 100v 200A 100V N-Channel MOSFET | |
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Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTT68P20T IXTH68P20T O-268 O-247 68P20T | |
MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
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OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a | |
B3P5-vh-b
Abstract: 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0
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EN60950 B3P5-vh-b 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0 | |
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Contextual Info: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB33N10 FQI33N10 FQB33N10TM O-263 | |
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Contextual Info: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB33N10 FQI33N10 FQI33N10TU O-262 FQI33N10 | |
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Contextual Info: FQB12P10 / FQI12P10 August 2000 QFET TM FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB12P10 FQI12P10 -100V, FQI12P10TU O-262 | |
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Contextual Info: APTM20DAM08T Boost chopper MOSFET Power Module VDSS = 200V RDSon = 8mΩ Ω max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • • • S2 VBUS VBUS |
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APTM20DAM08T | |
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Contextual Info: FQB70N10 / FQI70N10 August 2000 QFET TM FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB70N10 FQI70N10 FQI70N10 FQI70N10TU O-262 | |
ixtk120pContextual Info: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTK120P20T IXTX120P20T 300ns O-264 120P20T ixtk120p | |
POWER MOSFET Rise Time 1000V NS
Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
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OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, 100-TYP. 205Crawford 00011b3 POWER MOSFET Rise Time 1000V NS MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9028SP1 OM9030SP1 OM9Q27SP1 | |