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    DIODE 100V 80 A Search Results

    DIODE 100V 80 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE 100V 80 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    minimelf diodes color

    Abstract: cdsu4148 CDSN4148 CDSS4148 minimelf SOD80
    Contextual Info: Small-Signal Switching Diode COMCHIP www.comchip.com.tw LL4148-G Reverse Voltage:100V Forward Current: 150 mA Features MiniMELF SOD-80 Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the


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    LL4148-G OD-80) CDSU4148, CDSS4148 CDSN4148 100MHz, MDS0209003A minimelf diodes color cdsu4148 CDSN4148 minimelf SOD80 PDF

    Contextual Info: APTM20HM08F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 8mΩ Ω max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • •


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    APTM20HM08F 50/60Hz APTM20HM08F­ PDF

    SYLGARD

    Abstract: SYLGARD 539 MA47416-132 MA4P202-134
    Contextual Info: RoHS Compliant Silicon PIN Diode Chips V 6.0 Absolute Maximum Ratings1 @ TAMB = +25°C Unless otherwise specified Features • Switch & Attenuator Die • Extensive Selection of I-Region Lengths • Hermetic Glass Passivated CERMACHIP • Oxide Passivated Planar Chips


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    200oC, SYLGARD SYLGARD 539 MA47416-132 MA4P202-134 PDF

    330 marking diode

    Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
    Contextual Info: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60


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    FLLD258 FLLD261 FLLD263 400mA -200mA 330 marking diode FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63 PDF

    MIC2176

    Abstract: Zener Diode SOD323 npn TRANSISTOR SOT89 CRCW06030000FKEA NPN Transistor 10A 24V GRM32ER61C476ME15 BAT46W DIODE 100V CDEP147NP-4R7MC-95 EEUF2A101 CDEP147NP-100MC-95
    Contextual Info: MIC2176 10A Evaluation Board High Input Voltage, Synchronous Buck Controllers Featuring Adaptive On-Time Control Hyper Speed ControlTM Family General Description The Micrel MIC2176-1/-2/-3 is a family of constantfrequency, synchronous buck controllers featuring a


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    MIC2176 MIC2176-1/-2/-3 100kHz, 200kHz, 300kHz. MIC2176-2, 200kHz M9999-052411-C Zener Diode SOD323 npn TRANSISTOR SOT89 CRCW06030000FKEA NPN Transistor 10A 24V GRM32ER61C476ME15 BAT46W DIODE 100V CDEP147NP-4R7MC-95 EEUF2A101 CDEP147NP-100MC-95 PDF

    Contextual Info: POWER OPERATIONAL AMPLIFIERS PA08 • PA08A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ±150mA


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    PA08A 546-APEX 150mA PA08MU PDF

    N mosfet 100v 200A

    Abstract: 100V N-channel mosfet FQH90N10V2
    Contextual Info: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)


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    FQH90N10V2 FQH90N10V2 N mosfet 100v 200A 100V N-channel mosfet PDF

    Contextual Info: QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB34P10TM -100V, PDF

    3 phase inverter ic ir2136

    Abstract: diagram for test ic 8873 4583 schmitt trigger IRAM136-3023B IR2136 application note ic 4026 DN 98-2a, application note AN-1044 IR2136 3023B data 8873
    Contextual Info: PD-97270 RevA Integrated Power Hybrid IC for Low Voltage Motor Applications IRAM136-3023B Series 30A, 150V with Internal Shunt Resistor Description International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light


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    PD-97270 IRAM136-3023B IRAM136-3023B AN-1049 3 phase inverter ic ir2136 diagram for test ic 8873 4583 schmitt trigger IR2136 application note ic 4026 DN 98-2a, application note AN-1044 IR2136 3023B data 8873 PDF

    IXTH140P10T

    Abstract: IXTT140P10T
    Contextual Info: Preliminary Technical Information IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T PDF

    FQB34P10TM_F085

    Contextual Info: QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB34P10TM -100V, FQB34P10TM_F085 PDF

    IRFU4620

    Abstract: IRFR4620TRPBF jedec package TO-252AA
    Contextual Info: PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID G


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    -96207A IRFR4620PbF IRFU4620PbF Curr75 AN-994. IRFU4620 IRFR4620TRPBF jedec package TO-252AA PDF

    Contextual Info: APTM20AM06S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mΩ Ω max @ Tj = 25°C ID = 300A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • •


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    APTM20AM06S 50/60Hz PDF

    N mosfet 100v 200A

    Abstract: FQA90N10V2 100V N-Channel MOSFET
    Contextual Info: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)


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    FQA90N10V2 FQA90N10V2 N mosfet 100v 200A 100V N-Channel MOSFET PDF

    Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTT68P20T IXTH68P20T O-268 O-247 68P20T PDF

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


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    OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a PDF

    B3P5-vh-b

    Abstract: 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0
    Contextual Info: A122_JBW 1/19 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product [FEATURES] • Compact and low price. • Wide input voltage range type.


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    EN60950 B3P5-vh-b 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0 PDF

    Contextual Info: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB33N10 FQI33N10 FQB33N10TM O-263 PDF

    Contextual Info: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB33N10 FQI33N10 FQI33N10TU O-262 FQI33N10 PDF

    Contextual Info: FQB12P10 / FQI12P10 August 2000 QFET TM FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB12P10 FQI12P10 -100V, FQI12P10TU O-262 PDF

    Contextual Info: APTM20DAM08T Boost chopper MOSFET Power Module VDSS = 200V RDSon = 8mΩ Ω max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • • • S2 VBUS VBUS


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    APTM20DAM08T PDF

    Contextual Info: FQB70N10 / FQI70N10 August 2000 QFET TM FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB70N10 FQI70N10 FQI70N10 FQI70N10TU O-262 PDF

    ixtk120p

    Contextual Info: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTK120P20T IXTX120P20T 300ns O-264 120P20T ixtk120p PDF

    POWER MOSFET Rise Time 1000V NS

    Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
    Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package


    OCR Scan
    OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, 100-TYP. 205Crawford 00011b3 POWER MOSFET Rise Time 1000V NS MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9028SP1 OM9030SP1 OM9Q27SP1 PDF