DIODE 1.5 KE 36 CA Search Results

diode 1.5 ke 36 ca

Abstract: KE200A KE 75 DIODE KE 76 DIODE ke39 KE10 KE10A KE11 KE11A KE-25
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

LM78L08

Abstract: diode 1.5 ke 36 ca LM78L12 LM78L09 LM78L15 LM78L06 LM78L05 LM78L10 LM78L18 LM78L24
Contextual Info: LM78L08 FIXED VOLTAGE REGULATOR P OS ITIVE 3-TERMINAL 0.1A P OS ITIVE VOLTAGE REGULATORS This se rie s of fixe d-volta ge monolithic inte gra te d-circuit volta ge re gula tors is de s igne d for a wide ra nge of TO- 92 a pplica tions. The s e a pplica tions include on-ca rd re gula tion for

diode 1.5 ke 36 ca

Abstract: diode KE KE200A 520C DO-204AC KE10 KE10A
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

ke51a

Abstract: KE 76 DIODE 6BL7 diode KE 300 ke300a P4 diode diode 1.5 ke 36 ca KE160A KE200A KE39
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

MM5Z30B

Abstract: diode smd marking jy SMD Diode KE transistor smd marking KE smd diode code kc smd marking Kk smd marking code KN marking code smd ky smd marking ky smd diode marking KC
Contextual Info: MM5Z2V2B~MM5Z39B SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation: max. 200 mW PIN • Small plastic package suitable for surface mounted design DESCRIPTION 1 Cathode 2 Anode 2 1 DESCRIPTION Top View Simplified outline SOD-523 and symbol

AT731

Abstract: BAT54 CDRH3D16-220 ELJPC220KF LEM2520-220 LQH3C220 SC-70-5L bord and component layout circuit 731 zener diode operation amplifier 731
Contextual Info: AT731 White LED Step-Up Converter Immense Advance Tech. DESCRIPTION FEATURES Inherently Matched LED Current The AT731 is a step-up DC/DC converter specifi- High Efficiency: 84% Typical cally designed to drive white LEDs with a constant Drives Up to Four LEDs from a 3.2V Supply

diode V3J

Abstract: V3J diode V04A autofocus IC K3022
Contextual Info: CAMERA PRODUCTS KA7406 ZOOM & REEL MOTOR DRIVER AND CONTROLLER The KA7406 is a monolithic integrated circuit, and suitable for the zoom & reel motor driver for camera, tape deck, any other consumer and industrial applications. The KA7406 has the functions which drive buffer for flash & battery

1.5KE47CP

Abstract: 1.5KE400P 1.5KE39P 1.5KE220CP 1.5KE440p 1.5KE36CP 1.5KE33CP 1.5KE68CP 1.5ke33p 1.5KE27P
Contextual Info: 1.5KE6V8P,A/440P,A 1.5KE6V8CP,CA/440CP,CA  TRANSILTM FEATURES PEAK PULSE POWER= 1500 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly

Contextual Info: 1 . 5 k e 6 V 8 p,a/ 44 o p ,a !M g [EL[E(5M (QM © S 1 . 5 K E 6 V 8 CP,CA/ 440 C P ,C A S G S -T H O M S O N TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. . UN! AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR.

LM044L

Abstract: LM044L LCD SMA-13 P-7.5 7906h-001-000 lcd 4x20 6170361D1301 DIN96-ABC-P smd diode sm 4007 pare12 4335A
Contextual Info: C51 Extension Board . User Guide Section 1 Introduction . 1-1 1.1 Features .1-1

Contextual Info: KAI-2020 IMAGE SENSOR 1600 H X 1200 (V) INTERLINE CCD IMAGE SENSOR JUNE 9, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0017 KAI-2020 Image Sensor TABLE OF CONTENTS Summary Specification . 5

1669M-96

Abstract: B9106 en 60721-3-3 1/takamisawa RELAYS jy 110
Contextual Info: The Power in Electrical Safety Main Catalogue Edition 1/2014 BENDER Group Main Catalogue Edition 1/2014 Subject to change! – Bender GmbH & Co. KG, Germany The catalogue and the articles and illustrations which it contains are protected by copyright. Distribution, translation, microfilming and storing in electronic systems, particularly for commercial purposes, are not permitted without prior permission from the author. We accept no liability

SMP25N06

Abstract: 1811pl00-3c8 ferroxcube 43 toroid core equivalent diode for R2C 1811P transistor a1m Si9110 1811PL Siliconix AN703 A1m anode
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS

ke marking transistor

Contextual Info: T O SH IB A 2SK3051 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K3 0 51 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm

16T1655

Contextual Info: Prelim inary Revised January 1999 E M I C Q N D U C T G R tm Features • Bidirectional interface between GTLP and LVTTL logic levels Fairchild's GTLP has internal edge-rate control and is pro­ cess, voltage, and tem p e ra ture PVT com pensated. Its function is sim ilar to BTL and G TL but with different output

ds0113

Contextual Info: R C H II_ D E M IC O N D U C T O R t 74LVQ157 Low Voltage Quad 2-Input Multiplexer General Description Features The LVQ157 is a high-speed quad 2-input m ultiplexer. Four bits of data from tw o sources can be selected using the com ­ mon S elect and Enable inputs. The fo u r outputs present the

diode 1.5 ke 36 ca

Abstract: 40N160
Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES

Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode Test Conditions V CES Tj = 25°C to 150°C 1400 1600 V V CGR ^ 1400 1600 V = 25°C to 150°C; RGE = 1 M£i Continuous ±20 V V GEM Transient

Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400

Contextual Info: T O S H IB A 3Z12-3Z390 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR A N D SUPPRESSOR APPLICATIONS Average Power Dissipation P = 3W Peak Reverse Power Dissipation P rSM Zener Voltage V z = 12~390V Tolerance of Zener Voltage

i2c hall effect sensor

Abstract: sincos encoder irf 3250 400v 15A transistor module resolver sensor 100C IR2214 PIIPM30P06D009 TMS320LF2406A VTH100C
Contextual Info: PIIPM30P06D009 Preliminary Data PIIPM30P06D009 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce on (2.46Vtyp @ 30A, 25°C) Positive Vce(on) temperature coefficient

KAI-11000

Abstract: KAI-11000M kodak 1000X HLMP-8115 JESD22 KAI-11000CM NLPB500 NSPG500S Photodiodes
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-11000M KODAK KAI-11000CM Image Sensor 4008 H x 2672 (V) Interline Transfer Progressive Scan CCD March 14, 2005 Revision 4.0 KAI-11000 Rev 4.0 www.kodak.com/go/imagers 585-722-4385 Email: imagers@kodak.com

r1270

Contextual Info: R1270x Series 3A, 34V Step Down DC/DC converter with PLL Synchronization for Automotive Applications NO.EC-299-131029 OUTLINE The R1270x is CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.10 and the R1270x can provide the maximum 3A output

KAI-11002

Abstract: KAI 11002 0938 KAI-11000 ccd KE DIODE DIODE 4008 KAI-11002-CAA 1000X KAI-11002-CAA-CD-B1 MARKING "V2H" DIODE
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0938 June 15, 2010 KODAK KAI-11002 IMAGE SENSOR 4008 H X 2672(V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 5