DIODA RECTIFIER Search Results

2l09

Abstract: Schottky Diode 40V 6A
Contextual Info: DUAL POWER SCHOTTKY RECTIFIERS USD635C USD640C USD645C USD650C 12A Av, up to 50V DESCRIPTION The USD600C series of power Schottky rectifiers, in the industry standard T0-220 package, is specifically designed fo r operation in power switching circuits to frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

Contextual Info: A dvanced P o w er Te c h n o lo g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D60B APT60D50B 600V 500V 60A 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRO DUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode

dioda rectifier

Abstract: dt3400 pearson 411
Contextual Info: A d v P o w a n c e d e r T e c h n o lo g y * 1 - Cathode 2-Anode Back of Casa - Cathoda APT30D60B APT30D50B 600V 500V 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A PP LIC A T IO N S PR O D U C T FEATURES P R O D U C T BENEFITS • Anti-Parallel Diode

Contextual Info: A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anods Back of Caaa -Cathoda APT30D40B 400V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS > Anti-Parallel Dloda -Switchmoda Power Supply -Invartars

dioda rectifier

Abstract: 4r3ti
Contextual Info: /'°7 —t V W X / Power Devices J b s f T r^ i • -f 3fr — K ■I t -f 1/ 3R3TI60E-080 4R3TI20Y-080 4R3TI30Y-080 4R3TI6QY-080 6R1TI30Y-080 III 3R3TI20E-080 3R3TI30E-080 m & Application O > > » it Device type £ /l'a ï v i - JU Diode and T h yristo r M odules

Contextual Info: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

DD-221

Abstract: dioda module
Contextual Info: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,

diodes byw 92

Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Contextual Info: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH

mr2001s

Abstract: dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S MR2000S
Contextual Info: MR2000S SILICON series MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS 20 AMPERE 50-1000 VOLTS DIFFUSED JUNCTION . . . compact, highly efficien t silicon rectifiers fo r medium-current applications requiring: • High C urrent Surge - 400 Amperes @

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.

Diode BYW 56

Abstract: 0224S diode BYW 19 2791T byw+36+v
Contextual Info: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH

7000R

Abstract: T0-209AC
Contextual Info: INTERNATIONAL RECTIFIER TOR ' ^ Ì F| 4ÖSS4S5 DGObfl-Ti 4 | T - X 5-/7 Data Sheet No. PD-3.141 in t e r n a t io n a l r e c t if ie r b ia u i- S t m t S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 /j s 110 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

IRF710

Abstract: IRF711 IRF710.711
Contextual Info: N-CHANNEL POWER MOSFETS IRF710/711 FEATURES TO-220 • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability

IRFF420R

Abstract: IRFF421R IRFF422R IRFF423R
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■

IRF612R

Abstract: IRF610R IRF611R IRF613R
Contextual Info: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■

rj dioda

Contextual Info: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s

2N6155

Abstract: 2n6156 2N6755 2N6756 dioda
Contextual Info: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode

Contextual Info: • OO^flùb fl£35 b05 47T ■ SIEMENS Mini PROFET BSP 452 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load

IRF341R

Abstract: IRF343 IRF340R IRF342R IRF343R
Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated

ma 8920

Abstract: dioda rectifier 04140 tny 226 dioda 12B 750PEF10 750PEF40 power dioda cross 9BB. GI 8920
Contextual Info: INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER 4T DE§4flSS452 DD047B4 b Data Sheet No. P D -3.06f 49C 04734 C INTERNATIONAL RECTIFIER I R 1 180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description The 750PEF series of fast turn-off thyristors use centre

MDA980-1

Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Contextual Info: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer

1rf630

Abstract: rf630 IRF632R IRF630 HARRIS
Contextual Info: 3 ] H A R R I S IR F 6 3 0 /6 3 1 /6 3 2 /6 3 3 IR F 6 3 0 R /6 3 1 R /6 3 2 R /6 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T O -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150V - 2 0 0V • i"DS °n = and 0 .6 fi