DIOD L2 Search Results

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

morocco L3

Abstract: STTH806TTI
Contextual Info: 2001-08-17 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-289-62 STTH806TTI tandem diod STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS

PIN DIODE

Abstract: antenna wimax 3500 PIN diode switch MARKING 54 "Pin Diode" 6 pin switch diode BAR90-02LRH BAR90 BAR90-02L
Contextual Info: BAR9 0-0 2 LRH PI N Diod e Switch us ing BAR9 0 fo r 3.5 G Hz W i Ma x Appl ication Technic al Rep ort T R 146 Revision: Version 1.0 Date: 31.07.2009 RF and Protecti on Devi c es Edition 31.07.2009 Published by Infineon Technologies AG 81726 Munich, Germany

BAR90-02LRH

Abstract: relay finder 60.13 BAR90 MARKING 54 "Pin Diode" ANT-2450
Contextual Info: BAR9 0-0 2 LRH PI N Diod e Switch us ing BAR9 0 fo r 2.4 - 2. 5 GHz W LAN/Wi M AX Applic atio ns Technic al Rep ort T R 137 Revision: Version 1.0 Date: 29.07.2009 RF and Protecti on Devi c es Edition 29.07.2009 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: MOTOROLA SC {DIOD ES/OPTOJ 6367255 MOTOROLA 34 SC D eT | t , 3 b 7 2 5 5 D IO D ES/O PTO r O D3 f l ED ö 4 aoono MICRO-T (continued) '5 l~ n MMT2060 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low noise amplifier, oscillator and mixer applications.

3sm diode

Abstract: 3SM* diode
Contextual Info: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code

Contextual Info: DATA SHEET PHOTOCOUPLER ,- PS2521 -1 r 2,-4,PS2521 L-1 2,-4 LARGE FORWARD INPUT TYPE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES DESCRIPTION T he P S 2521-1, -2, -4 and P S 2 521 L-1 , -2, -4 are o p tica lly co u p le d iso lato rs c o n ta in in g a G aA s light em ittin g diod e

SD840

Contextual Info: UNITRODE CORP DD1107S 3 f 92D 9 3 4 7 9 6 3 UNITRODE CORP 11075 POWER SCHOTTKY RECTIFIERS D U SD820 U SD 835 U SD 840 U SD 845 24A Pk, up to 45V DESC R IPT IO N The U S D 8 0 0 series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diod e s In

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2651 ,PS2652,PS2651 L2.PS2652L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2 6 5 1 , P S 2652, P S 2651L2, P S 2 562 L2 are o p tica lly co u p le d iso lato rs co n ta in in g a G a A s light em ittin g diod e

Contextual Info: S 'a y M u - / tU T K Schottky Barrier Diod« Axial Diode O U T L IN E D IM E N S IO N S Case : Axial D1NS4 40V 1A B= 2QMIN ' ¿2.6 o » 20MIN -M—° C athode band Marking S4 6N - - u - y h A ! » < f « ï D ate code Type No. U nit I mm • R A TIN G S Absolute Maximum Ratings

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2525-1 ,-2,-4,PS2525L-1 ,-2,-4 LARGE FORWARD INPUT TYPE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SIRIES -N E P O C S e rie s - DESCRIPTION T he P S 2525-1, -2, -4 and P S 2 525 L-1 , -2, -4 are o p tica lly co u p le d iso lato rs c o n ta in in g G aA s light em ittin g diod es

nec 2501 LD

Abstract: NEC 2501 LE 240
Contextual Info: DATA SHEET NEC PHOTOCOUPLER P S 2 5 0 1 - 1 ,- 2 ,- 4 , P S 2 5 0 1 L -1 ,- 2 ,- 4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -N E P O C S e rie s - DESCRIPTION T he P S 2501-1, -2, -4 and P S 2501 L-1 , -2, -4 are o p tica lly c o u p le d iso lato rs con ta in in g a G aA s light em ittin g diod e

Contextual Info: M IT S U B IS H I <DIGITAL ASSP> M66510P/FP R-TYPE LASER DIODE DRIVER T h e s p e c ific a tio n s a re s u b je c t to c h a n g e w ithout notice. D E S C R IP T IO N The M 66510P /FP is an inte grated c irc u it to drive a sem i­ P IN C O N F IG U R A T IO N

Contextual Info: Three Phase Rectifier Bridge IdAV - 85 A VRRM =800-1600 V Preliminary data V RSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 VUO VUO VUO VUO 85-08N07 85-12N07 85-14N07 85-16N07 Symbol Test Conditions *d A V Tc U sM l2t -o A Types = Maximum Ratings 1 0 0 °C , m odule

Contextual Info: Bulletin 120205 International S»r]Rectifier 12F R SERIES STANDARD RECOVERY DIODES Stud Version Features H igh su rg e cu rre n t c a p a b ility A va la n ch e typ e s a va ila b le S tud c a th o d e and stud a n o d e ve rs io n W id e cu rre n t range

Contextual Info: BigPIC 6 Alla MikroElektronikas utvecklingssystem utgör oersättlig verktyg för programmering och utveckling av mikrokontroller-baserade enheter. Noga utvalda komponenter och användning av maskiner av den senaste generationen för montering och testing av dessa är den bästa garanti för

RBV1000

Abstract: RBV1010 1001RBV
Contextual Info: 5YNSEMI SEMICONDUCTOR RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 10 Amperes 3.9 ± 0.2C3 , 30 ± 0.3 4.9 ± 0.2 - P= K-H FE A TU R E S : * * * * * * * * 0 3.2 ± 0.1 High current capability High surge current capability

TIED59

Abstract: TIED56
Contextual Info: TIED 5 9 A va la n c h e Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

XR13600

Abstract: XR-13600CP XR 13600 13600cp XR-13600 XR13600CP XR13600AP
Contextual Info: Z * EXAR XR-13600 Dual Operational Transconductance Amplifier G E N E R A L DESCRIPTION F U N C T IO N A L B LO C K DIAGRAM T h e X R -13600 is a dual operational tra nsconductance N orton a m plifier w ith predistortion diodes and non­ com m itted D arlington bu ffer outputs.

motorola analog ICs vol.1

Abstract: 45fs 500MSPS JTS8308500 TS81102G0 TS8308500 TSEV8308500G atmel 0825 G
Contextual Info: MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 8-bit resolution. 500 Msps min sampling rate. 1.3 GHz full power input bandwidth. Band Flatness: TBD Input VSWR (packaged device): TBD SINAD = 45 dB (7.2 Effective Bits), SFDR = 54 dBc @ FS = 500 Msps, FIN = 20 MHz :

RSE4012-B

Abstract: RSE4012-BS 12aac dioda 115 WEGO dioda impulsowa semiconductors RSE1112 RSE1112-BS RSE2312-BS diod l2
Contextual Info: UK£AD STEROWANIA SILNIKAMI, 1-FAZOWY, 3-FAZOWA REDUKCJA MOMENTU OBROTOWEGO TYPU RSE1112-BS, RSE2312-BS, RSE4012-BS • • • • • • • pr¹d znamionowy: 12AAC 53b ³agodny rozruch dla silników 1-fazowych redukcja momentu obrotowego dla silników 3-fazowych

CQFP68

Contextual Info: TS8388B ADC 8-bit 1 Gsps Datasheet 1. Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth –3 dB 1 Gsps (min.) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 Gsps, FIN = 20 MHz

NPN Two monolithic transistors

Abstract: d5 diod CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG DIOD B4 85116
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz