DIN 41876 Search Results

2N2222 circuit

Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
Contextual Info: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

2N2222A

Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
Contextual Info: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

BC260

Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case

Contextual Info: SIEMENS The BPX43 is an epitaxial NPN silicon planar phototransistor in a T018 18 A 3 DIN 41876 package with a glass lens. The collector is electrically connected to the metallic case. Sym. Value Unit ^S m a x 880 nm 450 to 1100 Spectral Sensitivity Range

BFR15

Abstract: Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF
Contextual Info: BFR15 NPN Transistor for low-noise broadband and antenna amplifiers BFR15 is an epitaxial NPN silicon planar RF transistor in the case 1 8 A 4 DIN 41876 TO-72 for universal application up into the GHz range, e.g. for low-noise broadband and antenna amplifiers.

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

BC266

Abstract: BC261 BC262 BC263 BC-261
Contextual Info: BC261 . . BC266 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC263 is a low noise type. max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876

10RJ

Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj
Contextual Info: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided

BFW30

Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
Contextual Info: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals

BSX48

Abstract: BSX49 sm 58 b transistors M502 Q60218-X48 Q60218-X49 q406 1h3c Transistor BSX 95
Contextual Info: 25C D • A23£bQ5 0DQMÖ1S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - SIEMENS AKTIEN6ESE LL SCH AF BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.

BFR15A

Abstract: 200MHZ S70C
Contextual Info: IMPN -Transistor für rauscharme Breitband- und Antennenverstärker BFR 15A B F R 1 5 A ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A 4 DIN 41876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z. B. für rauscharme Breitband- und Antennenverstärker.

BFX62

Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Contextual Info: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.

BFX60

Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

pm4020

Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Contextual Info: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

BFX59

Abstract: Transistor BFX 25 BFX59F
Contextual Info: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­

Transistor BSX 95

Abstract: BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN
Contextual Info: BSX 48, BSX 49 NPN Transistors fo r switching applications Transistors BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in a case 18 A 3 DIN 41876 T O -18 . The collector is electrically connected to the case. The transistors are for use as high-speed switches, and are particularly suitable for

F25 transistor

Abstract: AFY37 60106-Y Germanium Transistor Germanium mesa transistor 60106
Contextual Info: AFY37 The A FY37 is a germanium PNP RF epitaxial mesa transistor in a case 18 A 4 DIN 41876 TO-72 . The terminals are electrically insulated from the case. The A FY 37 is particularly designed for use in antenna amplifiers up to 900 MHz. O rder num ber Q 6 0 1 0 6 - Y 37

Contextual Info: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors

AF239

Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Contextual Info: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.

BFX89

Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

BFX59

Abstract: Transistor BFX 25 BFX59F
Contextual Info: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­

AF139

Abstract: OOQ405 mz 1540
Contextual Info: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads